Research Center Juelich

Contact person:

Qing-Tai Zhao


FZJ: Research Center Juelich

Forschungszentrum Jülich GmbH
52425 Jülich
Germany

Equipment / Facilities

Processing platform

  •  Micro/nanoelectronics clean room facility for CMOS/MEMS, III-V.
  • CMOS processing down to 10nm (EBL)
  • ALD/AVD for 300mm wafer (Al2O3, HfO2 based  dielectric/ferroelectric, TiN, TaN)
  • CVD for 200mm wafer (Si-Ge-Sn)
  • Ion implantation: 0.2keV-250keV (up to 300mm wafer)
  • RTP (up to 300mm wafer)
  • Sputtering
  • ….

Modelling platform

Characterization platform

Material characterization:
RBS/channeling, SIMS, XPS, XRD, high resolution TEM, AFM, APT,  …
Device characterization:
I-V, C-V,P-V, cryo-measurements, Hall setup (till to 15K), pulse measurements

Expertise
Main Expertises
Beyond CMOS Neuromorphic Computing • Synapse and neuron devices
• Memristor devices and their integration with CMOS
Phonon engineering x
Small slope switches-NW/TFET/NEMS • NW transistors
• TFETs
Alternative materials-2D layers x
Novel devices for ultra-low power • Nanowire FETs based on high mobility materials
1D x
Quantum Technologies & Very low temperature electronics • Cryogenic CMOS
• Toplogical insulators for quantum computing
• Superconducting quantum computing
More Moore Logic Nanodevices& circuits x
Memories • Ferroelectric devices
Very low power devices x
High temperature electronics x
More than Moore micro-nano-bio Sensors & Systems x
Energy Harvesting x
RF devices & circuits x
Photonics devices • GeSn photonics
Power devices • SiC power devices
Flexible electronics x
Smart systems& Systems design Smart systems x
Systems design x
Research interests
Research interests
Beyond CMOS Neuromorphic Computing • FeFETs, ferroelectric tunneling diodes, synapses and neuron devices for neuromorphic computing.
• Memristor devices with resistive switching materials and phase change materials and their integration with CMOS (1T1R and 1TnR).
Phonon engineering x
Small slope switches-NW/TFET/NEMS • Gate all around FETs with both horizontal and vertical nanowires.
• Vertical SiGeSn/GeSn heterostructure FETs (both MOSFET and TFET).
• Nanowire TFETs
Alternative materials-2D layers x
Novel devices for ultra-low power • High mobility GeSn based CMOS
1D x
Quantum Technologies & Very low temperature electronics • Cryogenic CMOS for quantum computing application
• Toplogical insulator materials growth and characterization.
• Quantum computing with toplogical insulators and superconductors
• Cryogenic characterization
More Moore Logic Nanodevices& circuits x
Memories • FeFETs
Very low power devices x
High temperature electronics x
More than Moore micro-nano-bio Sensors & Systems x
Energy Harvesting x
RF devices & circuits x
Photonics devices • SiGeSn growth and characterization
• Direct bandgap GeSn photonics
Power devices • SiC power MOSFETs
Flexible electronics x
Smart systems& Systems design Smart systems x
Systems design x