Warsaw University of Technology / Cezamat

Contact persons:

Romuald Beck


Warsaw University of Technology
Pl. Politechniki 1,

00-661 Warsaw,

Poland

Equipment / Facilities

Processing platform

  • CR facility with cleanliness level 1000/100
  • Thermal processes: oxidation (dry and wet SiO2), diffusion (B, P), annealing (PMA)/ high temperature recrystallization
  • PECVD Oxford Instruments (fabrication of SiOx, SiNx, SiOxNy, a-Si)
  • RIE Oxford Instruments (etching od dielectric/conductive materials in fluorine, as well as chlorine-based RF plasma)
  • Reactive magnetron sputtering (Oxford Instruments); fabrication of dielectric materials (HfOx, HfOxNy, AlN, AlOx, TiOx), conductive (Al, Ti, TiN) and amorphous semiconductor (IGZO)
  • PVD – e-gun 6kW (Mo, Pt, W, Ti, Ni,…)
  • Photolithography SUSS MJB4 (UV, 1 µm feature size)
  • Batch spray chemical cleaning/etching SICONNEX (Piranha, SC1, SC2, HF, BHF, metals etching, dielectrics etching, …)
  • Thermal processes: dry and wet (HYDROX) oxidation, diffusion (B), high temperature annealing
  • LPCVD Si3N4 and poly-Si deposition
  • RIE/ICP plasma etching in chlorine containing plasmas Oxford Instruments (RF and ICP  plasma source; -30°C to 80°C temperature control; in-situ interferometric etching monitoring)
  • Photolithography EVG 6200 (UV, 0,8 µm feature size, front side and back side alignment)
  • Wafer bonding EVG 510/200 (adhesive, eutectic, glass frit, direct bonding)
  • Ion implantation FLEXion 200-IBS ( 5keV-200keV, 1 AMU-210 AMU, 0°-60° tilt angle; substrate temperature control 100°C-500°C)
  • E-beam writer JEOL 9300 (50kV and 100kV, CD<20nm, writing field w/stitching 1mm x 1mm)

Modelling platform

Characterization platform

  • Advanced electrical characterization….
    • Modern SUSS MicroTec PM8 probe station for the measurement of very low currents in a wide range of temperatures
    • Keithley 4200-SCS Semiconductor Characterization System comprising:
      • SMUs for the measurement of static and quasi-static I-V charracteristics,
      • Low-noise preamplifers ensuring the accuracy of current measurement below 1 pA.
      • Small-signal module for admittance measurements in the 1kHz-10MHz range,
      • Ultrafast pulse modules for charge-pumping and charge-trapping characterization.
    • LCR HP 4285A precision meter for admittance measurements in the 75kHz – 30MHz range
    • A set of Keithley SMUs 236, 237 and 238 for static I-V measurements in a wide range of currents (up to 1 A) and voltages (up to 1000 V)
    • Keysight B1500 Device Analyzer for static (I-V) and small-signal (C-G-U) measurements
  • Spectroscopic ellipsometry UVISEL (190 – 850 nm, automatic goniometry)
  • ·Spectroscopic ellipsometry UVISEL2 (190-2000 nm, 2D mapping, automatic goniometry, stage movements 200mm x 200mm)
  • AFM
  • HRSEM ZEISS Auriga (SE and BSE observations, 0,01kV – 30kV; resolutions: 2,0 nm @ 1kV, 1,0 nm @ >15kV; stage movements 0-110mm x 0-110mm; tilt angle: -5° to +60°, rotation: 360°)
  • HRTEM
  • FTIR
  • Confocal microscopy
  • Profilometry
Expertise

Beyond CMOS

More Moore / Logic devices & circuits + Memories

  • Materials synthesis and growth (PECVD, PVD, thermal methods)
  • MOS/TFT test devices processing
  • Reliability and variability of MOS devices and circuits (i.e., CV/IV characterization, Split-CV and Charge Pumping), extraction of electrical electro-physical properties of fabricated materials and structures
  • Ultra-shallow RF plasma implantation of nitrogen/fluorine for improvement of electro-physical properties of MOS structures or modification of growth kinetics of particular dielectric layers
  • Silicon nanocrystals embedded in dielectric ensembles – technology and characterization

More than Moore / Sensors

  • Dielectric, conductive and semiconductor materials synthesis for ISFET devices and novel sensors/biosensors

More than Moore / Energy Harvesting

  • Novel concept devices

More than Moore / RF devices & circuits

More than Moore / Photonics devices

  • Dielectric, conductive and semiconductor materials synthesis for optoelectronic and photonic devices technology
  • Full line-up for optical characterization of fabricated materials and structures, i.e., optical spectroscopy, high-resolution laser spectroscopy, spectroscopic ellipsometry, confocal microscopy, high-resolution spectrophotometer with a helium cryostat for absorption and advanced spectrofluorometric system for emission/excitation/fluorescence kinetics measurements, Optical Backscattering Reflectometry (OBR)

More than Moore / Power devices

  • Detailed electrical characterization, extraction of electrophysical parameters  (static and pulse I-V, C-V, stress and sense, breakdown)

Flexible electronics / Organic devices

Flexible electronics / Others

Smart systems

Systems design

Research interests

Beyond CMOS

More Moore / Logic devices & circuits + Memories

  • High-k dielectric materials for MOS devices
  • Step-slope devices and tunnel FETs
  • Multi-level gate-sacks for memory structures
  • Dielectric materials for novel memory structures
  • Transparent and flexible electronics based on novel transparent amorphous semiconductor and dielectric layers (TFTs)

More than Moore / Sensors

  • Materials and technologies of Field-Effect Biosensors (bioFET devices)

More than Moore / Energy Harvesting

  • Novel concept devices

More than Moore / RF devices & circuits

More than Moore / Photonics devices

  • Silicon photonics
  • Novel photonic devices based on metamaterials
  • Hybrid optoelectronics and photonics

More than Moore / Power devices

  • Simulation of electrical characteristics
  • Influence of electrical stress, stability, breakdown mechanisms

Flexible electronics / Organic devices

Flexible electronics / Others

Smart systems

Systems design