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Universitat Autònoma de Barcelona (Spain)


The group of Micro and Nanoelectronic Devices belongs to the Department of Electronic Engineering of the Universitat Autònoma Barcelona (Spain) and has a large and distinguished experience in the field of nanoelectronic devices, both  ultimate CMOS devices (More Moore domain) and also emerging devices that take advantage of materials properties at the nanoscale (Beyond CMOS domain). Its activities cover the device concept, modeling, simulation, fabrication, characterization and reliability. The group has built the required experimental facilities to carry out this research.


Number of persons working in the Nanoelectronics field:

28 researchers (9 faculty members, 6 post-docs and 13 Ph.D. students) organized into two subgroups (REDEC and NANOCOMP).


Main Research activities in Nanoelectronics

Characterization of electron devices

  • Nanoscale electrical characterization
  • Resistive switching devices
  • Graphene devices
  • Reliability issues of concern for MOS devices (BTI , CHI and TDDB)
  • Circuit reliability simulation methodology


Modeling of electron devices

  • Compact modeling of aging mechanisms
  • Modelling of quantum transport and simulation of nanometer scale devices using a multi-scale approach from ab-initio methods (TranSIESTA) to compact modelling
  • SOI-based MOSFETs
  • Graphene devices
  • Quantum electron transport simulation based in Bohmian trajectories
  • Ferroelectric materials based transistors



Research facilities

Nanoscale electrical characterization laboratory

  •  Three atomic force microscopes, equipped with the modules for current (CAFM) and contact potential (KPFM) measurements, temperature and environmental control.
  • Prototype of Enhanced-CAFM (ECAFM) with 1pA-1mA current dynamic range, developed by the group.

Conductive AFM with ambient and temperature control

Device level characterization laboratory

  • 200mm wafer probe stations electro-statically shielded (equipped with thermo-chuck)
  • benches for semiconductor device measurement (Semiconductor Parameter Analyzers, LCR‑meters, switching matrix, pulse generator…).
  • Circuit modules for the characterization of highly specific phenomena in electron devices, developed by the group.

Semiautomatic wafer probe station with thermochuck

Computation cluster

  • High performance computing (HPC) cluster, with 32 AMD Opteron 248 processors (single core) and 8 Intel Xeon X5650 CPUs (6-core), with a total of 208 Gb of RAM and 1Tb of user storage, networked through dual Gigabit Ethernet and InfiniBand interconnects.
  • VASP 4.6, SIESTA and TRANSIESTA first-principles electronic structure and transport codes
  • Other GPLd software for molecular dynamics simulations.


Publications summary (2009-2013)

156 Papers in indexed journals                                                                   

170 International and national Conference contributions    

38 Invited talks                                                            

3 Books                                                                        

5 Book chapters        



Montserrat NAFRIA