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Institut d'Electronique du Sud (France)


IES is constituted of 3 research departments. The main research activities are modeling, design, characterization of microelectronics devices and innovating systems in electronics and optoelectronics.


Number of persons working in the Nanoelectronics field:

The CCS (Composants, Capteur Systemes) department is involved in Nanoelectronic devices and sensors. 13 permanent members and 5 Ph-D students work in this field.


Main Research activities in Nanoelectronics

  • Development of materials and technologies (ferroelectrics, pyroelectrics, piezoelectrics)
  • Integration of new materials in innovative devices (NanoTubes FET, Thin NT layers)
  • Device components (Microsystems, micro-fluidic, thermics, MEMs)
  • Application instrumentation (sensors, wireless systems, lab-on-chip).
  • Advanced electrical characterization (low frequency noise, charge pumping, capacitance)
  • Modelling (numerical and compact) of advanced devices (SOI, nanotubes).


Research facilities

Processing facilities:

  •  Metal deposition (sputtering, evaporation)
  •  Electronic Lithography
  •  Oxide deposition (PECVD, sputtering)
  •  Etching capabilities for silicon and oxide (RIE)
  •  Mask aligner


  • Processing, fabrication and implementation of thin film based micro and nano devices.
  • 30 years experience in microsystems and our expertise in the development of materials and technologies for sensor applications recognized on the world stage.
  • Our team masters all the fabrication chain from process and manufacturing with onsite resources to industrial implementation.


Characterization platform

  • Wide range of measurement setups for electrical characterization (DC-RF (C(f,V), I(V)), charge pumping, DLTS, high temperature, 200mm wafer probe station, ferroelectric tester, Hall effect…).
  •  Low noise dedicated measurement setup (high resolution spectrum analyzer, femto and EGG instruments low noise amplifiers, Faraday cage, high vacuum chamber (10-7 Torr)) using a turbo molecular pump BocEdwards (EXT70H / primary pump XDD1)
  • Sensor benchmark tests (acceleration, vibration, humidity, temperature, IR microscopy).
  •  Profilometer, AFM , ellipsometer
  •  Simulation platform (Synopsys TCAD, 1D and 2D home-made noise simulators)
  • Characterization and modeling of the transport induced in micro and nanoelectronic devices and systems (MOSFETs, Silicon-on-Insulator (SOI), bipolar transistors, single or thin layers of carbon nanotubes),
  • Low frequency noise (1Hz-10 MHz) characterization and modeling.
  •  These activities allow improving the fabrication processes of ultimate nanoscaled devices or the conception and the performances of advanced devices and systems.









Dr Frédéric Martinez