IMS/NCSR Demokritos (Greece)
Number of persons working in the Nanoelectronics field:
31 persons (9 permanent research scientists, 12 postdocs and 10 students.)
Main Research activities in Nanoelectronics
The oxide MBE and surface analysis laboratory focuses on high-k gate dielectrics on Si and high mobility semiconductors (Ge, III-V) for advanced CMOS aimed for beyond 22 nm technology nodes. Special emphasis is given on the development of appropriate surface passivation methodologies and compatible dielectric materials which combine good electrical quality interfaces with low equivalent oxide thickness for aggressively scaled transistor gates.
The development of gate dielectrics is performed at the materials level by means of in-situ XPS and UPS physic-chemical characterization, and at a second stage by means of capacitor electrical characterization.
All the projects below were/are implemented and managed by the MBE lab of IMS
-IMS/NCSR-D and IMEC
General Secretarial Research & Technology, Greece (PhD and Post Doc training projects)
in the framework of the joint postgraduate program between IMS/NCSR-D and NTUA.