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University of Liverpool (United Kingdom)

The University of Liverpool is one of the UK's leading universities and plays a key role in
economic development in terms of employment, skills, research and technology. Currently the
University has over 19,000 registered students and an annual income of £219 million, which
includes £75 million for research.
The department of Electrical Engineering and Electronics is renowned for its excellence in
research and a rating of 5A was awarded to the department in the last assessment exercise.

 

The Solid State Electronics Research group operates in the new Wolfson and BioMEMS
laboratories, which are located in 800 sqm of mainly class-100 clean room environment. The
group focuses on the design, fabrication, testing, measurement, analysis and modelling of
micro/nano structures and devices that integrate silicon and related materials.

http://www.liv.ac.uk/

 

Number of persons working in the Nanoelectronics field:

There are on average over 100 students studying at PhD, MPhil and MSc (Eng) levels in the department.

 

Main Research activities in Nanoelectronics

  • Capacitance transient measurement, constant voltage stress, transistor characterization; Fast data acquisition (50 μs); investigate: minority carrier lifetime,

oxide charge trapping dynamics.

  •  Numerical 2D/3D Device simulation; mixed mode simulation; process simulation; able to extract DC and RF parameters.
  •  High resolution imaging, electron energy loss and energy dispersive X-ray analysis for elemental distributions
  • Multi-angle Spectro ellipsometry; Investigate: film thickness, optical dielectric constants, optical band gap, absorption coefficient and film uniformity; High
    resolution of 190nm to 1700nm; In-situ annealing analysis (-160 to 600 oC)
  •  High/low frequency capacitance voltagemeasurement; Investigates: equivalent oxide thickness, oxide charge density, interface states density.
  •  Current voltage measurement; Investigates: activation energy, dielectric
    constant, Arrhenius plot; Ability to heat a wafer to a temperature from 15 oC to 300 oC; Precise control of temperature – within ± 1 oC

Research facilities

Processing facilities:

  • ALCVD Aixtron 200FE reactor
  • Edwards E306A Coating System
  • Anneal System

Characterization platform

  • M2000U VASETM Spectro ellipsometry +INSTECTM Heat stage + Mapping Stage
  •  HP 4192A impedance analyzer + Keithley 595 quasi-static CV meter
  •  Keithley 602 Solid State Eletrometer + Heat Stage + SignatoneTM Microprocessor

controller

  • HP 4155 Semiconductor Parameter Analyser + Booton 73B capacitance meter
  •  Silvaco Atlas Athena Devedit simulation package


Dissemination


Contact

Steve Hall