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Joint Characterization Platform

 

Coordination: Grenoble INP

 

Contact person: Gérard Ghibaudo, ghibaudo@minatec.inpg.fr

 

 The Joint Characterization Platform has been established to allow access to the characterization facilities to all NANOSIL partners. Access can be made available to external organization.


Example of facilities concern:


Electrical characterization

  • LF electrical characterization (admittance, CV, IV, 1/f noise) of silicon based materials and devices
  • Room to low temperature magneto-transport in high magnetic fields (Hall, mobility…°)
  • RF and HF characterization at wafer level up to 110 GHz and down to 30K (S parameters, noise, power)
  • Transient and fast current measurements, Setup for measurements of ring oscillators
  • EEPROM memory programming/erasing/retention  characterization
  • Defects and interface quality characterization by C-V, G-w, charge pumping, DLTS, TSC, transient analysis…
  • Reliability characterization (breakdown, hot carrier stress, BTI, BTS…)
  • Sub-nm depth profiling for doping/mobility data in Si and strained Si

 

Optical characterization

  • Absorption measurements, wavelength range UV-VIS-IR
  • Photoluminescence (PL) and micro spot Photoluminescence (µPL)
  • Laser excitation: 325 nm, 457.8nm, 488nm, 514.5nm
  • Spectrometer: 350nm-1600nm
  • Electroluminescence (EL): 350nm-1600nm
  • Photocurrent-photovoltage (UV-VIS)

 

Physical and structural characterization

  • Physical characterization of silicon based materials by SIMS, XRD, HRTEM, AFM, HRSEM, ellipsometry, FIB, RBS, channeling, MEIS, ESCA, XRR...   
  •   Near field microscopy by AFM (STM, SGM, TUNA, EFM, MFM...)
  •  Sub-nm depth profiling of strain and composition (Si, SiGe)
  • Nanoscale strain measurements using TERS with complementary finite element modeling
  • Micro-Raman: Composition and stress determination Simultaneous evaluation of surface roughness, strain and related defects
  • Real-time monitoring of strain/morphology evolution on a nanoscale during thermal processing
  • Defect identification: misfit dislocations, stacking faults and threading dislocations
  • Surface analysis, Line Width Roughness ans critical dimension metrology on patterned surfaces by 3D AFM
  • MEMSNEMS characterization (vibration, sensitivity, mechanical, thermal…)


The Joint Characterization Platform also assists partners to get access and know-how of specific processes not available at the home institution.

 

If you want to send a Request Form, Please, CLICK HERE