Competences
Novel computing architectures (Neuromorphic, Quantum, etc.)
- IUNET-Modena:
- Design of neuromorphic circuits with RRAM devices
- cryo CMOS device operation and noise
- Tampere University:
- Neuromorphic Devices (Synapses and neurons), Neuromorphic circuits for edge learning, Non-volatile Memories, Cryogenic Electronics
- THM:
- Modeling of memristor-based ANN with inherent stochastic learning
- Modeling and simulation of various synaptic devices
- Simulation, modeling and design of ANN
- Organic synaptic devices
- TYNDALL:
- Dielectric interfaces.
- Expertise in material and device property extraction, (e.g. carrier mobility/concentration, Contact resistance, defect density), hybrid metrologies, complemented by first-principles simulations.
- Complete picture of material properties and device operation, and FlexiFab fabrication for FET device processing.
- Atomic Layer Etching – modelling and etch experiments.
- Dopant control
- Logic and FETs
- Ferroelectrics , Multiferroics
- Fabrication and test of Ge-based and GeSn-based quantum electron devices.
- Formation of low-resistance contacts using laser thermal annealing with alloys of nickel-germanide
- Area Selective Materials Processing.
- Si thin-films scaled below 10 nm in nanowire and silicon-on-insulator (SOI) devices
- UAB:
- Resistive switching devices (memristors): characterization and modeling.
- SPICE modeling of memristive nanowire networks
- Uppsala: Memristor devices for Neuromorphic computing
- Grenoble INP:
- Device modelling and simulation of oxide-based ReRAM (CROMA)
- Multilevel analogue resistive switching devices (LMGP)
- WUT:
- OxRAM/RRAM and HfO₂-based ferroelectric devices (fabrication, pulse characterization, compact modelling)
- Multilevel resistive switching for artificial synapses
- RWTH / AMO:
- Photonic reservoir computing; integrated photonics for quantum computing (ion-trap)
- Memristors for neuromorphic computing
- FZJ:
- FeFET and Si/SiGe devices for neuromorphic computing
- Neuromorphic sensing
- Cryogenic devices for quantum computing
- Superconductor and topological-insulator qubits
- VTT: Neuromorphic, analogue in-memory and quantum computing
- University of Twente: Neuromorphic and quantum computing (fabrication and physics)
- URV–UGR:
- URV: physics and modeling of neuromorphic devices, in particular memristors.
- UGR: neuromorphic and in-memory device concepts; 2D/CMOS hybrid architectures; device/circuit co-design
- University of Glasgow:
- Simulations of RRAM
- Simulation and fabrication of hybrid (organic/inorganic) memories
- ICN2:
- In-memory and neuromorphic computing
- Ferroelectric domain and domain-wall physics
- Magneto-ionic actuation (magnetic memristors)
- Self-power electronics from toxic-free 2D ferroelectric and ferroic materials (oxides, halide perovskites, MXenes)
- Quantum computation
- Phonon impact on noise in quantum systems
- Lukasiewicz-IMiF:
- Photonic sources (VCSELs) for systems
- Elements for AI hardware
- INL:
- Magnetic tunnel junctions (MTJ) as ultra-high-sensitivity field sensors and spin-transfer-torque nano-oscillators, used for sensing, DC↔RF transduction, true random number generators, PUFs, energy harvesting, artificial synapses and neurons
- MTJ devices and spintronic circuits integrated monolithically with 180 nm CMOS on 200 mm wafers
- 2D-material memristors; MEMS/NEMS for ultra-low-power mechanical computing, edge and in-sensor computing
- Politehnica Bucharest:
- FIB-SEM and correlative STEM-EDX/EELS (STEM 0.14 nm) for buried interfaces and nanoscale defects
- Co-localized XPS-ISS-µRaman-REELS for chemical and electronic structure
- HMU:
- Halide perovskite memristors (mixed-halide, low-dimensional, lead-free) emulating synaptic and neuronal functions
- Volatile and non-volatile resistive switching; gate-tunable memristors at low switching fields
- Coordinator of EIC Pathfinder ELEGANCE (flexible neuromorphic engines)
Phonon engineering
- IUNET-Modena:
- Electrothermal modeling and simulation of advanced devices
- UAB:
- Computation of thermal properties of novel materials and nanostructures with DFT and Molecular Dynamics.
- VTT:
- Optoelectromechanical and nanomechanical systems, thermal management, topological phononics
- URV–UGR:
- UGR: nanoscale thermal modelling for laser processing and 2D/Si material stacks
- ICN2:
- Phonon transport in layered materials; nanoscale thermal transport physics and instrumentation
- Optomechanics
- Topological phononics
- Thermal properties of ferroelectrics and antiferroelectrics
- Electrocaloric effect
- Spatially resolved phonon detection by EELS-STEM
- Lukasiewicz-IMiF:
- Nanolaminates
- Crystalline nanolayers
- ALD for a wide range of material
Small slope switches-TFET/Fe Transistors/Dirac-Source FET/NEMS/etc.
- IUNET- Modena:
- SS Switches, TFETs, Dirac Sources
- Ferroelectric device simulation
- TAU:
- TFET/2D-FETs/FeFETs
- THM:
- Simulation and modeling of TFET, JL-FET, SB-FET, NW, RFET
- Grenoble INP:
- Electrical transport characterization and modeling, parameter extraction
- Simulation of steep-slope devices with NEGF (CROMA)
- UCL:
- Phase change materials (VO₂)
- RWTH / AMO:
- 2D-based steep-slope FETs
- FZJ: TFET
- VTT: Ferroelectrics, thin-film transistors
- University of Twente:
- Ferroelectric/piezoelectric FETs
- NEMS-based switches
- URV–UGR:
- URV: physics and modeling of TFETs.
- UGR: TFET and DD-RFET device physics and TCAD
- Low-power steep-slope concepts
- University of Glasgow:
- NEGF electronic transport simulation
- Self-consistent Schrödinger-Poisson solvers
- ICN2:
- Atomic-scale STEM characterization of heterostructures
- NOEMS
- INL:
- High-transconductance graphene FETs
- Advanced TEM/STEM (EELS, EDS, in situ heating, biasing, cryo)
- NEMS switches for ultra-low-power operation
- Mechanical logic elements
Alternative materials-2D layers
- KTH:
- Inkjet printing and casting of formulated 2D ink materials
- TAU:
- 2D semiconductors
- TYNDALL:
- 2D: TMDs – theory, materials growth and characterisation; electrical contacting of TMDs; device fabrication and characterisation.
- UAB:
- Electrical characterization of 2D nanodevices.
- Development of specialized characterization set-ups.
- Structural, electronic and thermal properties of vdW materials from first principles.
- Grenoble INP:
- Interface states and defects analysis (I-V, C-V, admittance, DLTS, noise) over a wide temperature range
- Complex dielectric permittivity from GHz to THz
- Quantum simulation of 2D devices (CROMA)
- Lamellar dichalcogenides by ALD (LMGP)
- UCL: Graphene
- WUT:
- Fabrication and characterization of emerging 2D materials
- Interfaces, charge transport, optoelectronic nanostructures
- RWTH / AMO: Graphene, MoS₂, PtSe₂, h-BN
- VTT: Graphene
- University of Twente: Pure boron layers
- URV–UGR:
- URV: physics, compact modeling and parameter extraction of TMD FETs.
- UGR: graphene and TMD devices (MoS₂/WS₂); CVD/PE-ALD growth, transfer, laser recrystallization, patterning, electrical/noise characterization
- ICN2:
- High-quality 2D synthesis; ultrafast processes in graphene
- Polycrystalline and amorphous 2D materials
- Free-standing oxide layers; domain walls/oxide interfaces
- Thermal and elastic characterization
- 2D ferroelectrics and MXenes, Pb-free materials
- Lukasiewicz-IMiF:
- Electronic-grade epitaxial graphene on SiC (6H, 4H, defect-engineered 4H)
- 2DEGs from thin-film heterostructures
- Raman and PL characterization
- INL:
- Graphene, hBN, MoSe₂, MoS₂ and other TMDCs by thermal CVD/MOCVD on 200 mm wafers
- Wafer-scale MBE of InSe, In₂Se₃, GaSe, Bi₂Se₃
- Wafer-scale device fabrication
- Politehnica Bucharest:
- SHG imaging for strain and symmetry mapping
- MX-µRaman for stress/strain and composition of 2D materials
- AFM roughness metrology and PSD analysis
- HMU:
- Solution-processable graphene and 2D crystals (functionalisation, doping)
- 2D interface engineering for charge-selective contacts
- 2D materials in perovskite solar cells and modules up to solar-farm scale
1D Devices/NW/CNT
- Uppsala: SiNW based electronics sensors
- RWTH / AMO: 1D metal-insulator-graphene diodes
- FZJ: GAA NW transistors
- URV–UGR:
- URV: compact modeling of Si NW MOSFETs
- University of Glasgow:
- CNT-based transistors and interconnects
- Devices based on CNT and Si nanowires
- ICN2:
- Atomic-scale STEM of nanowires and nanowire networks
- Toxic-free and ferroelectric halide perovskites
- Lukasiewicz-IMiF: ALD for surface modification of 1D/NW/CNT systems
- INL: In situ TEM electrical biasing and heating
- Politehnica Bucharest:
- MX-µRaman of 1D nanostructures
- Electrical AFM (C-AFM, SSRM, SCM, KPFM, EFM)
- AFM/AFM-IR for defect and contaminant detection
Very low temperature electronics
- ENSICAEN:
- DC and low-frequency noise characterisation and modelling (UTBOX, FinFET, GAA NS FET, GAA NW FET …)
- IUNET-Modena:
- cryo CMOS device operation and noise
- TAU:
- Cryogenic memories (Design, fabrication and characterization of cryogenic memory devices down to 4K and integrate them in in-memory-computing circuits.)
- Uppsala:
- Suspended nanoscale single-electron transistor as gigahertz nanoelectromechanical beam resonator
- Grenoble INP:
- Electrical characterization below 10 K of transistors for qubit-addressing CMOS circuits
- Compact modelling at very low T (CROMA)
- FZJ:
- Steep-slope cryogenic MOSFETs
- Cryogenic memory
- Cryogenic neuromorphic computing
- VTT: Cryogenic CMOS
- University of Twente: Electrical analysis of devices and circuits in cryogenic environment
- URV–UGR:
- URV: modeling of physical effects in FETs at very low temperatures
- University of Glasgow:
- NEGF and quantum simulations
- Superconducting and semiconductor qubit simulations
- ICN2:
- Rare-earth ions
- Atomic-scale STEM of quantum systems
- INL:
- TEM/STEM with EELS and EDS down to liquid-nitrogen temperature
- Politehnica Bucharest: MX-µRaman for lattice contraction, strain and phase change
Amorphous Oxide Semiconductor FETs
- IUNET-Modena:
- IGZO device modeling and simulation
- TAU:
- IGZO-FeFETs (Design, fabrication and characterization of scaled memory devices for high integration density and ultralow power operation.)
- TYNDALL:
- P-type Semiconducting oxide design and characterisation
- Grenoble INP: Electrical transport characterization and modeling, parameter extraction (CROMA)
- VTT: ALD, sputtering and solution-based thin-film processes
- URV–UGR:
- URV: physics, compact modeling and parameter extraction of AOS TFTs, including noise
- Lukasiewicz-IMiF:
- Thin-film deposition, device fabrication and characterisation of oxides and heterostructures (ALD, CVD, PVD)
- ALD ZnO, TiO₂, Al₂O₃
- P-type oxides by PVD (NiO, CuO)
- INL:
- Amorphous and nanocrystalline thin-film Si FETs
- MoSe₂ and MoS₂ FETs
- Politehnica Bucharest:
- FIB-SEM and STEM-EDX/EELS for buried interfaces and oxide integrity
- AFM-IR chemical characterization
Others
- Grenoble INP: AFM electrical and electromechanical characterization (PFM, C-AFM, SCM, KPFM, sMIM)
- URV–UGR:
- UGR: nanosecond laser processing/recrystallization; nanoscale electrical-noise and RTN characterization
- University of Glasgow: DFT and drift-diffusion simulations
- ICN2:
- Spin, spin waves and heat interactions
- Computational nanoelectronics and spintronics from ab initio
- Lukasiewicz-IMiF: 2DEGs from thin-film oxide heterostructures
- INL:
- Graphene liquid-gate FETs
- MEMS/NEMS for sensing, RF and emerging computing
- HMU: Solution-processed halide perovskite semiconductors (lead-based and lead-free)
Competences
Logic Nanodevices & circuits/FDSOI, Nanosheet, Stacked channels, etc
- ENSICAEN:
- DC and low-frequency noise characterisation and modelling (UTBOX, FinFET, GAA NS FET, GAA NW FET …)
- IUNET- Modena:
- Electrothermal modeling and simulation of advanced devices
- KTH:
- FDSOI Process Line with various options for testing new functional sensors etc
- THM :
- Simulation and modeling of multiple-gate FET, NW-FET
- Fast multiscale simulation approach for quantum transport in ultrashort MOSFETs
- TYNDALL:
- Dielectric interfaces.
- Interconnect metal prediction
- UAB:
- Reliability of CMOS devices and integrated circuits.
- Electrical characterization and Modeling of 2D semiconductor based FETs for digital and RF applications.
- Development of specialized characterization set-ups and smart analysis techniques
- Modelling of quantum transport and simulation of nanometer scale devices using a multi-scale approach from ab-initio methods (SIESTA, BITLLES) to compact modelling.
- Modelling and simulation of ultra-small SOI-based MOSFETs in the scaling limit.
- Grenoble INP:
- CMOS device electrical characterization (static to noise), modelling and simulation
- VerilogA circuit simulation with compact models (CROMA)
- Etching for advanced nodes (LTM)
- WUT:
- Digital, analogue and mixed-signal CMOS IC design
- EDA/PDK development
- Variability-aware design
- FD-SOI PDK test structures
- RWTH / AMO:
- Scaled 2D transistors
- Vertical stacking of transistor channels
- FZJ:
- FDSOI CMOS
- GAA NW/NS transistors
- VTT: ASIC and MMIC design and characterization
- University of Twente: :
- FDSOI nanodevices and circuit design
- Fabrication and 3D silicon nanomachining
- URV–UGR:
- URV: compact modeling of FD/UTB SOI and multi-gate MOSFETs.
- UGR: Si-CMOS/FDSOI nanoelectronics
- TCAD and DFT-informed modelling
- Test structures
- NCSRD: Nanowire MOSFETs
- University of Liverpool:
- Design-for-test architectures, 3D circuits, reliability
- Hardware security
- PVT-variation-aware test
- IEMN: RF and mixed-signal circuit design for telecommunications
- University of Glasgow:
- NEGF transport simulation; Schrödinger-Poisson
- Terahertz nonlinearities
- ICN2:
- Reconfigurable logics
- NEGF transport simulation; Schrödinger-Poisson
- Terahertz nonlinearities
- Atomic-scale STEM
- INL:
- 2D-CMOS integration
- Contact/interface engineering
- Politehnica Bucharest:
- FIB-SEM and STEM-EDX/EELS; XPS-ISS-µRaman-REELS
- AFM roughness and PSD
- AFM-based failure analysis (C-AFM, SSRM, SCM, KPFM, EFM, nanomechanics, AFM-IR)
- MX-µRaman for stress/strain
Memories/Charge-based, Resistive/Capacitive
- IUNET-Modena:
- RRAM modeling and simulation up to compact circuit level
- TAU:
- Memories (FeFET, FeCap, FTJ), resistive/capacitive
- THM:
- Statistical modeling resistive RAM devices
- TYNDALL:
- Memories, Memristor / Resistive RAM
- UAB:
- Resistive switching devices (ReRAM): characterization and modeling
- Uppsala:
- Memristor devices for Neuromorphic computing
- Grenoble INP:
- Modelling of oxide-based ReRAM (CROMA)
- Valence-change nanoionic resistive switching (LMGP)
- OxRAM, FeRAM materials and capacitance structures (LTM)
- UCL: Design of SRAMs in advanced CMOS technologies
- WUT: OxRAM/RRAM and HfO₂-based FeRAM (stacks, fabrication, DC/pulse measurements, electrical models)
- RWTH / AMO: 2D material-based memristors
- FZJ:
- Ferroelectric memory
- Single-transistor memory
- NCSRD: Si nanocrystal memories, phase-change memories
- University of Liverpool: ReRAM, ALD-processed dielectrics and characterization
- URV–UGR:
- URV: physics and modeling of memristors.
- UGR: 1T-DRAM; eNVM/neuromorphic devices
- University of Glasgow:
- Molecular-based memories
- Flash memories (variability, reliability)
- Ferroelectric memory devices; self-power transistors based on 2D ferroelectric and ferroic materials
- ICN2:
- MRAM
- Modeling of magnetic, ferroelectric and multiferroic materials; STT/SOT-MRAM spin-torque simulation
- Ferroelectric memory devices; self-power transistors
- Lukasiewicz-IMiF:
- 2DEGs from thin-film oxide heterostructures
- ALD
- Politehnica Bucharest: Electrical AFM for charge-based, resistive and capacitive memory devices
- HMU:
- Halide perovskite resistive switching memories, including mixed-dimensional heterostructures
- Memristor electrical testing (sub-µs pulsed and C-V)
Very low power devices
- KTH:
- Low power design for MEDTECH applications
- TYNDALL:
- Topological Materials
- Grenoble INP:
- Electrical transport and interfaces characterisation (CROMA)
- WUT:
- Low-power mixed-signal CMOS ASICs and biomedical SoCs
- Autonomous wireless sensor nodes
- VTT:
- Ultra-low-power sensor interfaces
- URV–UGR:
- URV: physics of FETs at very low power.
- UGR: low-power device engineering; leakage/electrostatics optimization; energy-efficient sensing and readout
- ICN2:
- Phonon-electron and phonon-photon coupling in nano-optoelectronic devices
- Self-power transistors and memristors
- Lukasiewicz-IMiF:
- Photonic sources (VCSELs)
- INL:
- Sub-1-V switching in 2D memristors; mechanical devices for ultra-low-power switching and leakage reduction
- Politehnica Bucharest:
- Electrical AFM for nanoscale leakage, charge trapping and electrostatics
- HMU:
- Memristors switching at low electric fields
High temperature electronics
- KTH:
- High temperature FDSOI process line.
- SiC circuits for temperatures beyond 400 C.
- Uppsala:
- Interconnects for high temperature electronics
- Grenoble INP:
- SiC manufacturing, electrical characterization and modelling (CROMA)
- URV–UGR:
- URV: physics of high-temperature FET operation.
- UGR: GaN HEMT modelling and characterization, including reliability
- ICN2:
- Hot carriers in graphene and related 2D materials
- Lukasiewicz-IMiF:
- Thermally stable graphene-on-SiC Hall sensor
- Graphene-on-SiC dosimetric platform for fast-neutron fluence
- INL:
- Mechanical resonators and switches for high-temperature operation
- Politehnica Bucharest:
- MX-µRaman for lattice expansion, phonon-phonon scattering, hotspot detection (1–2 µm)
Others
- Grenoble INP:
- AFM electrical and electromechanical characterization
- URV–UGR:
- UGR: process/device TCAD
- DFT-linked interface models; low-frequency noise, RTN and phase-noise test structures
Competences
Micro-nano-bio Sensors & Systems
- IUNET-Modena:
- High-frequency Impedance and capacitance spectroscopy with nanoelectrode array sensors. Micro-Nanoplastics characterization for health and environment. Purely electrical nanoscale bioanalyte detection and imaging (phages, RBC, etc.)
- KTH:
- Complete Micro-Systems fabrication facilities
- THM:
- MEMS
- Pressure, Infrared, Temperature Sensors
- MEMS process and device modelling
- TYNDALL:
- Prediction of sensor materials
- Uppsala:
- Nanoelectronics for biotechnology
- Grenoble INP:
- Novel sensor architectures and dynamic detection; electrical characterization; microelectrode design, DEP
- Piezoelectric materials for sensors (CROMA)
- Oxide thin films and nanostructures for gas sensors (LMGP)
- Integration of semiconducting nanonets
- UCL:
- Simulation, fabrication, characterization of biological, chemical and physical sensors, notably in SOI CMOS-compatible technology or for harsh environments
- WUT:
- Label-free fibre-optic monitoring of cell cultures
- Metal/carbon nanocomposites for bio, gas and chemical sensing
- CMOS biomedical sensor SoCs
- RWTH / AMO:
- Plasmonic bio-sensors, photonic gas sensors
- FZJ:
- Chemical gas sensors
- NCSRD:
- Thermal sensors (gas and liquid flow, chemical, acceleration, pressure), microfluidics, capacitive pressure sensors, bio-sensors, RF-based sensors
- University of Liverpool:
- Nanowire sensors; compact on-chip fluorescence (wafer bonding and microfluidics)
- DNA electronics; surface chemistry for biosensors; bacterial and fungal bio-simulation
- Molecular motors
- VTT:
- Graphene, MEMS, sensor readout IC, post-CMOS integration
- URV–UGR:
- URV: technology and simulation of bio-sensors.
- UGR: graphene electrolyte-gated FET biosensors
- Functionalization, microfluidics, portable readout, wafer-level QC
- University of Glasgow:
- Silicon-based nanobiosensor design and fabrication
- DFT of material properties
- Chemical sensor simulations
- ICN2:
- DFT of material properties
- Chemical sensor simulations
- Graphene electrodes and SGFET biosensing
- Aptamer-based inkjet-printed flexible microfluidics
- Graphene electrochemical biosensors
- Wearable bioelectronics
- Lukasiewicz-IMiF:
- Microfluidic structures
- MEMS sensor functionalization
- Surface modification and biofunctionalisation
- Micro/nanostructurisation
- VIK-ETT:
- Biosensor development, thin-film layers, nanometrology
- INL:
- MTJ sensors (1–10 pT/Hz at 1 Hz)
- Sensor stack tailoring
- Monolithic integration with MEMS, CMOS, flexible interconnects
- Graphene electrolyte-gate multi-transistor biosensing chips
- Graphene/CMOS chiplets and graphene-on-CMOS
- Wafer-scale microfluidic platforms
- Graphene/MXene sensors; NEMS resonators for single-molecule mass detection
- Microwave sensors for cells, organoids and organ-on-a-chip
- Politehnica Bucharest:
- Sensor testing with control of temperature, humidity, gas flow and chrono-amperometric configurations
- HMU:
- Printed sensors from solution-processable inks
Energy Harvesting
- KTH:
- Graphen and other 2D materials for energy harvesting
- Grenoble INP:
- Piezo MEMS/NEMS characterization and modelling with AFM
- Coupled mechanical/piezoelectric/semiconducting FEM simulation (CROMA)
- ZnO nanowire piezoelectric nanogenerators (LMGP)
- 3D electromagnetic modelling coupled with TCAD for PV cells (CROMA)
- All-oxide solar cells for indoor and outdoor use (LMGP)
- UCL:
- Solar cells (black Si, CIGS, CZTS)
- Design of ULP CMOS harvesters for light, thermal and RF energy
- WUT:
- Autonomous wireless sensor networks, PV-powered long-term monitoring
- RWTH / AMO:
- 2D-based diodes for rectification
- FZJ:
- Thermal electric devices
- NCSRD:
- Piezo-resistive devices, electromagnetic energy harvesting
- University of Liverpool:
- Rectenna materials and devices; materials for PV
- IEMN:
- Silicon-based thermoelectricity using nano-phononics
- Thermoelectricity based on thermionic emission
- URV–UGR:
- URV: nanostructured organic solar cells
- University of Glasgow:
- Ground-state DFT calculations and molecular dynamics
- ICN2:
- Spin caloritronics; thermoelectricity
- Piezo- and flexoelectricity; bulk photovoltaic effect in ferroelectrics
- Printed perovskite solar cells; integration of harvesters with PV
- Implantable triboelectric nanogenerators
- Lukasiewicz-IMiF:
- Cantilever fabrication, including linear arrays
- VIK-ETT:
- Energy harvesting in applied sensors
- INL:
- Micro solar cells; thin-film solid-state batteries
- In situ TEM/STEM cycling
- HMU:
- Interfacial engineering of perovskite and organic solar cells and modules
- Indoor and outdoor PV characterisation
- 40-channel ISOS ageing laboratory
- Graphene–perovskite outdoor solar farm as operando reliability testbed
RF devices & circuits
- UAB:
- Modelling and simulation of graphene and post-graphene 2D materials devices targeting RF and sensing applications
- RF characterization and modelling of memristors
- Grenoble INP:
- THz characterization of materials and devices in the 0.2–4 THz band; high-frequency opto-RF components and systems (CROMA)
- III-V heterojunction bipolar (LTM)
- UCL:
- Modelling and characterization of RF passive and active devices
- Design of CMOS RF circuits and sub-systems
- RWTH / AMO:
- 2D integrated MMIC circuits
- NCSRD:
- RF passive devices (co-planar waveguides, filters, antennas)
- Local low-loss RF substrate for on-chip integration
- University of Liverpool:
- Antennas and RF power devices and technology
- IEMN:
- Ultimate thinning and transfer bonding for enhanced RF performance
- VTT:
- RF-MEMS, NOEMS, MMIC up to 700 GHz, BAW filters, IPDs
- University of Twente:
- RF analog and mixed-signal circuit design
- URV–UGR:
- URV: compact modeling for RF/microwave operation (HF MOSFETs, GaAs and GaN HEMTs).
- UGR: GaN HEMTs; RF characterization
- Oscillator/phase-noise and LF-noise structures
- ICN2:
- Spin-torque-induced ferromagnetic resonance
- Quantum control; coupling phonons to RF
- Terahertz spectroscopy
- NFC/RFID wireless biosensors and gas sensors
- Lukasiewicz-IMiF:
- RF GaN HEMT technology
- VIK-ETT:
- RFID applications
- INL:
- MTJ nano-oscillators with vortex free layers and their CMOS integration
- RF characterization up to 40 GHz (frequency domain) and 20 GHz (time domain)
- Micromagnetic simulations
- Graphene RF FETs and circuits
Photonics devices
- KTH:
- Vertical Cavity Lasers in III-V materials with integration of photonic crystals
- Transfer Printing
- Hybrid InP/PCSELs
- CMOS Photonics
- Grenoble INP:
- Photodetector modelling and degradation mechanisms (Ge, Si)
- Integrated photonics fabrication (glass and hybrid), design, test benches, 3D electromagnetic modelling (cRCWA) (CROMA)
- ZnO nanowire LEDs and self-powered UV photodetectors (LMGP)
- III-V on Si (LTM)
- UCL:
- Thin SOI photodiodes (UV to visible) with graphene gate
- SOI waveguides with graphene modulators
- WUT:
- Photonic integrated circuits, mid-IR Ge-on-Si photonics, lasers, optical amplifiers, photonic nanostructures
- RWTH / AMO:
- Photonic components (waveguides, couplers, ring resonators, MMIs, interferometers)
- Plasmonic sensors
- 2D-material photonic and optoelectronic devices
- Perovskite lasers
- FZJ:
- GeSn lasers
- Phototransistors
- NCSRD:
- Solar cells
- Theoretical modeling of waves at micro- and nano-scale
- University of Liverpool:
- Optoelectronic lab-on-chip equivalents for bio and chemical sensors
- IEMN:
- Electro-optical interposers for advanced packaging
- VTT:
- Silicon photonics (thick-SOI and SiN), Fabry-Pérot interferometers, hyperspectral imaging
- University of Twente:
- Photodiodes and LEDs
- Photonic integrated circuits, optocoupler design
- Optical waveguides
- URV–UGR:
- UGR: nanosecond laser processing and optical/Raman characterization of 2D semiconductors
- ICN2:
- Nanopatterned surfaces and metamaterials
- Photodetectors; nonlinear light converters
- Radiative cooling surfaces
- Photonic biosensors
- Lukasiewicz-IMiF:
- Si photodiodes, quadrants and arrays
- Si and Ge waveguides; VCSELs and arrays
- Transparent conductive electrodes
- Tuned DBRs
- INL:
- Single-photon-on-demand devices (hBN, graphene)
- 2D optoelectronics; diffractive optics and flat optics (visible–IR)
- Large-aperture diffractive and meta optics
- Politehnica Bucharest:
- FIB-SEM and STEM-EDX/EELS for interdiffusion and defects
- AFM-IR chemical characterization (<10 nm)
- XPS-ISS-µRaman-REELS; MX-µRaman/HRXRD stress/strain
- HMU:
- Perovskite and organic optoelectronic devices
- EQE, TRPL, PLQY, LBIC characterisation
Power devices
- IUNET-Modena: – Electrothermal and hot carrier effects simulation of GaN devices and circuits
- TCAD simulation and characterization of trapping effects in GaN and SiC
- KTH:
- SiC power devices including MOSFETs, BJT and IGBTs for high voltage
- Partner in the WBG Pilot Line for HV BJT/IGBT
- Grenoble INP:
- GaN dielectric interfaces (LTM)
- UCL:
- Simulation and characterization of power devices in harsh environments
- FZJ:
- SiC devices
- NCSRD:
- RF passives for power devices
- University of Liverpool:
- Oxides and interfaces on GaN (materials characterization)
- VTT:
- Materials and device development
- University of Twente:
- Device physics and fabrication of power devices
- URV–UGR:
- URV: compact models of LDMOSFETs and GaN HEMTs.
- UGR: AlGaN/GaN HEMT modelling and device engineering
- Lukasiewicz-IMiF:
- ALD/CVD/PVD functional layers
- GaN vertical power devices (TCAD and technology)
- GaN HEMT power transistors (normally-off p-GaN gate, MISHEMT)
- Gallium Oxide power device technology
- Politehnica Bucharest:
- Modular power test platform (off-state leakage up to 3 kV with pA sensitivity, pulsed I-V up to 10/800 A, pulses down to 1 µs, integrated C-V)
- X-ray µCT (~2 µm voxel) for packaging defects
- Environmental endurance and reliability testing with SEM-EDX
Flexible electronics
- IUNET-Modena:
- IGZO and dissolvable compostable materials for electronics
- TAU:
- 2D semiconductor-based wearable in-sensor computing
- THM:
- Simulation and modeling of submicron organic TFT devices
- Non-quasistatic modeling of organic TFTs
- Modeling variability of organic TFTs
- Simulation of organic permeable-base transistors
- Simulation and modeling of organic electrochemical FET
- UAB:
- Electrical characterization and modeling of inkjet-printed devices, Organic TFTs.
- Uppsala:
- Full-inorganic flexible Ag2S based memristors. Electronic skin.
- Grenoble INP:
- Passive circuits, antenna systems, RF design
- Electrical transport and interfaces (CROMA)
- Thin oxide films by spatial ALD, ALD and CVD, p-type oxides
- Composite materials
- Transparent electrodes from metallic nanowire networks
- Nanonet-based devices (LMGP)
- UCL:
- Ultra-thinning of SOI CMOS dies to a few µm by XeF₂
- Transfer of monolayer graphene on flexible substrates
- RWTH / AMO:
- Graphene Hall sensors, photodetectors
- NCSRD:
- OLEDs, organic photovoltaics
- University of Liverpool:
- Low-cost flexible organic circuits for mixed-signal applications
- Organic device modelling
- VTT:
- Printed electronics, roll-to-roll and sheet-to-sheet processes
- URV–UGR:
- URV: physics and modeling of flexible-electronics devices.
- UGR: inkjet printing and low-temperature processing for 2D-material and sensor structures
- University of Glasgow:
- First-principles electronic properties
- Charge transport in organic matter (polaron)
- 2D spintronics
- ICN2:
- 2D-material and graphene electronics
- Flexible graphene SGFETs
- Flexible electronics for nervous-system interfacing and implantables
- Nanoparticle-based printed passives
- Free-standing oxide films
- Stable organic glasses
- Printable inks and pastes (2D, halide perovskites, oxides)
- Dimensional metrology of nanopatterned devices
- Lukasiewicz-IMiF:
- Low-temperature deposition of nanolayers
- VIK-ETT:
- Wearables, flexible PCBs, additive manufacturing
- INL:
- Graphene and TMDC devices on polyimide
- 2D inks and pastes by liquid-phase exfoliation
- Flexible sensors for textiles
- HMU:
- Printed, flexible electronics from solution-processable inks (roll-to-roll, screen, doctor-blade, ultrasonic spray)
- Printing down to 1 µm
Others
- KTH:
- Laser ablation for several emerging materials such as ferroelectrics, and quantum based materials.
- TYNDALL:
- Ferroelectrics, Piezoelectrics, Multiferroics
- Grenoble INP:
- AFM electrical characterization
- COMSOL multiphysics (semiconductor physics and piezoelectricity)
- VTT:
- Quantum
- Lukasiewicz-IMiF:
- Si-based MEMS (AFM probes, cantilevers, membranes, TCDs, radiation detectors)
- FET detectors of THz radiation
- INL:
- 2D inks with controlled rheology, flake size and concentration
- HMU:
- Operando and field reliability of emerging devices
- KPFM/PFM, photoemission yield spectroscopy, Hall effect
Competences
Smart systems
- Tampere University:
- Associative learning systems using sensor fusion and memristive technology
- UCL:
- CMOS systems-on-chip (analog, RF, digital, memories), especially UTBB FD-SOI with adaptive back bias
- NCSRD:
- Mass flow meter (automotive, respiration control), bioanalytical microsystems
- University of Liverpool:
- Lab-on-chip
- Dielectrophoresis
- Cell and nanoparticle characterisation
- Automated bioreactors; biomimetic cell culture
- Microfluidic cell handling
- IEMN:
- Smart packaging
- Laser-based micromachining for advanced packaging
- URV–UGR:
- UGR: portable GFET sensor platforms
- Sensor arrays
- Embedded/edge readout
- ICN2:
- NFC wireless IoT sensors
- Closed-loop (neuro) modulation systems
- INL:
- MTJ sensors integrated at system level with acquisition electronics and AI processing
- Multi-hydrophobic/hydrophilic surfaces
- MEMS/NEMS systems for real-time and zero-power in-sensor computing
- HMU:
- Integration of 2D-material-based perovskite solar panels into a stand-alone solar farm
Systems design
- UAB:
- Device compact modeling for Reliability-Aware Design of ICs.
- UCL:
- PCB-level integration of ultra-low-power systems (sensors, energy harvesting, signal processing, RF, RFID tags, antennas)
- URV–UGR:
- UGR: device-to-system co-design for sensors, memories and neuromorphic demonstrators
- CMOS/2D test-chip definition
- VIK-ETT:
- Circuit design, microcontroller-based custom applications, module design, thermomechanical simulations, design validation, quality and reliability
- INL:
- CMOS BEOL design for homogeneous, heterogeneous and hybrid integration with 2D devices
Heterogeneous Integration, & Advanced Packaging
- IUNET- Modena:
- Electrothermal modeling and simulation at board level
- Grenoble INP:
- THz characterization of materials and devices (0.2–4 THz)
- RWTH / AMO:
- 2D stacking, encapsulation, p-n junctions, atomic layer etching of 2D materials
- Integration of unconventional materials into photonics
- VTT:
- 2.5D/3D integration
- University of Twente:
- Multiphysics (electro-thermal, thermo-mechanical, electro-mechanical) and compact modelling of advanced chip packaging
- URV–UGR:
- UGR: BEOL 2D/CMOS co-integration (+QCHIP)
- FAMES pilot-line test structures
- Microfluidics, wire bonding, chip carriers, packaging
- Lukasiewicz-IMiF:
- Die bonding, wire bonding, projection welding, wafer-to-wafer bonding
- VIK-ETT:
- Green electronics, biodegradable circuit substrates
- Politehnica Bucharest:
- X-ray µCT of RDLs, Cu pillars/micro-bumps, TSV and hybrid bonding
- FIB cross-sectioning and HR SEM (0.7 nm) for failure analysis and metrology of 2.5D/3D assemblies
- AFM nanomechanical assessment of dielectric and redistribution layers
- Environmental reliability testing
- HMU:
- Multi-scale printed integration (laser-based PCB pilot line down to 1 µm)
- Partner and access provider in INFRACHIP
