Beyond CMOS

Grenoble INP-IMEP-LaHC

  • Devices characterization and design:
    • Transistors: III-V on Si, 2D materials,
    • Negative Capacitance FETs (Steep Slope)
  • Electrical characterization and related modelling:
    • Parameter extraction for device operation analysis (including electronic transport, electrostatic coupling and interface quality)
    • Static and dynamic variability analysis
  • 3D Quantum simulation
  • Circuit design

UCL

  • Graphene
  • Phase change materials (VO2)

University of Glasgow

  • Device simulation and modelling:
    • Transistors: Si, III-V, 2D materials
    • Molecular electronics: molecular flash memory, inorganic molecules
    • Interconnect: Cu-CNT interconnects
  • Type of simulations:
    • Density Functional Theory
    • Non-Equilibrium Greens Function
    • Drift Diffusion
    • Analytical models
    • 3D quantum simulations
    • Statistical Variability

IUNET -University of Bologna

  • Solution of the Schrödinger/Poisson problem with the Non-Equilibrium Green’s Function (NEGF) formalism and implementing different Hamiltonians: non-parabolic effective mass, k*p, tight-binding.
  • Time-dependent solution of the Schrödinger equation for the simulation of quantum bits.
  • Homemade solver of the Boltzmann Transport Equation for nanowires.

IUNET -University of Calabria

  • Device-circuit simulations
  • Digital circuits and architecture simulations

IUNET -Politecnico of Milano

  • MEMS systems (sensors + integrated or discrete electronics for specific final applications)
  • Neuromorphic circuit design, testing on board

IUNET -University of Perugia

  • Electronic on cellulose and on “non conventional materials” (cellulose as a paradigm)
  • Large Area Electronics approaches (smart surfaces, quasi optical solutions)
  • Diamond device TCAD modeling.

IUNET -University of Torino

  • Design and simulation of molecular nanogap devices

IUNET -University of Udine

Modelling and simulations of:

  • Tunnel-FETs, Negative Capacitance FETs
  • Graphene and 2D gapped materials transistors
  • Graphene based sensors

IUNET -University of Pisa

  • Modeling of devices based on 2D materials, on topological insulators, and on devices based on tunnel barriers with non-equilibrium Green’s functions tools (in house nanotcad VIDES) and with commercial device simulator.

RWTH

  • 2D materials based devices and characterization

FZJ

  • Steep slope devices
  • nanowire devices
  • Junctionless MOSFETs
  • SiGeSn materials and devices

 UAB

  • Electrical characterization of 2D nanodevices.

VTT

  • Silicon nanofabrication, superconducting devices

University of Twente

  • New devices (fabrication, processing):
    • Ferroelectric devices
    • Electromechanical incl. piezoelectric devices
  • ·Single-electron devices, quantum dots
  • New materials, e.g. 2D materials, ferroelectric materials, Gallium-Nitride
  • Characterization and device physics of new devices, materials

ICN2

  • Spin, spin waves and heat interactions
  • Thermoelectric effects at the nanoscale
  • Experimental spin physics
  • Novel methods for spintronics and applications
  • Quantum computation
  • Computational nanoelectronics from ab initio
  • Computational spintronics and electronics
  • Opto-mechanics
  • Thermal transport in the nanoscale
  • Novel methods for phonon physics and applications
More Moore

Logic devices & circuits

KTH

  • FD SOI CMOS technology platform
  • SiGe and Ge MOSFET devices

IUNET-University of Modena and Reggio Emilia

  • Device-circuit simulations
  • Electrical characterization at wafer level
  • Reliability modeling

IUNET-University of Bologna

  • Cell-based design flow for implementation of digital IPs in BCD technology, in cooperation with STMicroelectronics in the framework of ECSEL JU R2POWER300 and R3POWERUP projects.

IUNET-University of Calabria

  • Device-circuit simulations
  • Electrical characterization at wafer level
  • Reliability modeling

IUNET-University of Roma “La Sapienza”

  • CMOS digital standard cell design
  • Digital circuit characterization and modeling
  • Power optimization of digital circuits

IUNET-University of Torino

  • VLSI architectures, mixed-signal design,
  • Logic Synthesis and Optimization,
  • Process Variation-Aware Design

IUNET-University of Udine

  • III-V based transistors
  • Fin-FETs, nanowire and stacked nanowire FET

IUNET-University of Pisa

  • Multiscale modeling of nanoscale transistors from ab-initio simulations of materials to device simulation with non-equilibrium Green’s functions tools (in house nanotcad VIDES) and with commercial device simulator

WUT

  • Materials synthesis and growth (PECVD, PVD, thermal methods)
  • MOS/TFT test devices processing
  • Reliability and variability of MOS devices and circuits (i.e., CV/IV characterization, Split-CV and Charge Pumping), extraction of electrical electro-physical properties of fabricated materials and structures
  • Ultra-shallow RF plasma implantation of nitrogen/fluorine for improvement of electro-physical properties of MOS structures or modification of growth kinetics of particular dielectric layers
  • Silicon nanocrystals embedded in dielectric ensembles – technology and characterization

RWTH

  • Transistors
  • Inverters
  • ring oscillators
  • high k-dielectrics

NCSRD

  • Nanowire MOSFETS

UAB

  • Reliability of CMOS devices and integrated circuits.
  • Electrical characterization and Modeling of 2D semiconductor based FETs for digital applications
  • Modelling of quantum transport and simulation of nanometer scale devices using a multi-scale approach from ab-initio methods (SIESTA, BITLLES) to compact modelling.
  • Modelling and simulation of ultra-small SOI-based MOSFETs in the scaling limit.
  • Development of transistors for low-power switching applications based on ferroelectric materials

University of Liverpool

  • Design for Test (DFT) architectures, 3D circuits, reliability
  • Novel hardware security solutions
  • Process, Voltage and Temperature (PVT) Variation Aware Test

IEMN

  • RF and mixed signal circuit design for telecommunications

VTT

  • Nano CMOS and FDSOI circuits
  • Sub- and near threshold ULP circuits
  • Neural processing units

UTwente

  • Ultra-low power device concepts, e.g. FD-SOI, UTB, FinFETs
  • Device and system reliability
  • Device physics, characterization, modeling, TCAD

ICN2

  • Reconfigurable logics
  • Electronic transport simulation using NEGF solvers
  • Simulation using self-consistent Schrödinger Poisson solvers

Grenoble INP_IMEP-LAHC

  • Bulk CMOS
  • SOI CMOS
  • Multi-gate CMOS
  • Nanowire FET
  • Small slope switch

Memories

Grenoble INP_IMEP-LAHC

  • Analysis of commutation mechanisms, retention…

UCL

  • Design of SRAMs in advanced CMOS technologies

RWTH

  • Non-volatile memory devices

University of Glasgow

  • Analysis of the device variability such as voltage threshold, retention time …

NCSRD

  • Si nanocrystal memories
  • Phase-change memories

UAB

  • Resistive switching devices (ReRAM): characterization and modeling.

Liverpool

  • ReRAM, ALD processed dielectrics and characterization

VTT

  • Memristors

ICN2

  • Magnetic random access memories
  • Modeling for magnetic, ferroelectric, and multiferroic materials
  • Simulation of spin torque phenomena (STT-MRAM, SOT-MRAM)

IUNET-University of Modena and Reggio Emilia

  • Device-circuit simulations
  • Electrical characterization at wafer level
  • Material-device simulations

IUNET-University of Bologna

  • Modeling and simulation of advanced non-volatile memory concepts (NVM) for new applications, such as ultra-low power computing, high-density and low-cost data storage, novel functions, communications and consumer electronics.

IUNET-University of Calabria

  • Device-circuit simulations
  • Electrical characterization at wafer level

IUNET-University of Ferrara

  • Electrical characterization and modeling of non-volatile memories reliability

IUNET-Politecnico of Milano

  • Electrical characterization, numerical modeling. Reliability extrapolation.

IUNET-University of Roma “La Sapienza”

  • Non-volatile memories: innovative floating-gate; low voltage programming waveforms; discrete storage nodes; resistive.

IUNET-University of Torino

  • Nanomagnetic memories

IUNET-University of Udine

  • Floating-gate and charge-trap non volatile memories

IUNET-University of Pisa

  • Three dimensional modeling of non-volatile memories
More than Moore

Sensors

Grenoble INP_IMEP-LAHC

  • Processing
  • Bio functionalization (with DNA or aptamer) for detection specificity
  • Analysis with account for coupling effects, traps, variability, low frequency noise and hysteresis effects
  • Development of associated compact models

KTH

  • Implantable bio-sensors
  • Si nanowire top-down fabrication

RWTH

  • Photodetectors
  • Pressure sensors
  • Humidity sensors
  • Strain sensors

Uppsala

Various nanoscale (0D, 1D, 2D, 3D) sensors for ions and charged molecules (e.g. DNA, protein) working in electrolytes:  Various sensor technologies:

  • 0D: Nanopore for DNA sequencing, etc.
  • 1D: Nanowire for ultrahigh-sensitivity
  • 2D: Nanosheet for beyond-Debye-length detection
  • 3D: Micro-capillary for large molecules

FZJ

  • Bio-chemical sensors

UCL

  • Simulation, fabrication, characterization of biological, chemical and physical sensors, notably in SOI CMOS compatible technology or for harsh environments (temperature, radiations)

NCSRD

  • Thermal sensors (gas and liquid flow, chemical, acceleration and  pressure sensing), Microfluidics, Capacitive pressure sensors, bio-sensors,
  • RF-based sensors

WUT

  • Dielectric, conductive and semiconductor materials synthesis for ISFET devices and novel sensors/biosensors

Univ. Liverpool

  • Nanowire Sensors (detect changes in surface potential)
  • Compact On-Chip Fluorescence by combining wafer bonding and microfluidics
  • DNA electronics (single molecule and polymers)
  • Surface chemistry for bio-sensors
  • Bacterial and Fungal Bio-Simulation
  • Molecular Motors (Myosin-Actin)

ICN2

  • DFT calculations of materials properties.
  • Chemical sensors simulations
  • Graphene based electrodes and Graphene SGFET for biosensing

Univ. Twente

  • Radiation, flow, acceleration, isfet

IUNET_University of Modena and Reggio Emilia

  • Modeling and simulation of transduction mechanisms at device level
  • Extraction of equivalent circuits

IUNET_University of Bologna

  • Ultra-low-noise and high-accuracy readout circuits for sensors and biosensors
  • High performance analog front-end design for industrial applications
  • Characterization of sensors and circuits
  • CMOS-integrated readout circuits for capacitive/resistive/resonant (current/magnetic/strain/bio-) sensors
  • Piezoelectric sensors
  • Design and prototyping of piezoelectric transducers
  • Design of CMOS capacitive interfaces for 3D IC wireless connection, in cooperation with STMicroelectronics in the framework of JTI ESiP project, and of CMOS active bio-electrodes for brain electrical imaging.

IUNET_Politecnico of Milano

  • MEMS accelerometers, gyroscopes, magnetometers, ultrasonic transducers, MEMS resonators for real time clocks and other timing applications

IUNET_University of Perugia

  • Radar sensors and microwave radiometer sensors;
  • Radiation sensors modeling (TCAD) and design.

IUNET_University of Roma “La Sapienza”

  • Inertial; conductance; electromyography; ECG; CMOS image sensors,
  • Biological sensors

IUNET_University of Torino

  • Electrochemiluminescent and electrochemical sensors, nanogap biomedical sensors,
  • wireless sensor network design,
  • neural network sensors,
  • Integrated Sensors and Sensor Fusion

IUNET_University of Udine

  • Biosensors

Energy Harvesting

Grenoble INP_IMEP-LAHC

  • Photovoltaics : 3D electromagnetic modelling coupled with TCAD tools for PV cells simulation, characterization (quantum efficiency, reflectivity, SHG, transport mechanisms, passivation….)
  • Fully coupled mechanical/piezoelectrical/semi-conducting FEM simulation of nanostructures, electromechanical response
  • Characterization under mechanical stress (pressure, flexion)

KTH

  • Low power circuit design

UCL

  • Solar cells (black Si, CIGS, CZTS) : fabrication, characterization, simulation
  • Design of ULP CMOS harvesters for light, thermal and RF energy

WUT

  • Novel concept devices

IEMN

  • Silicon-based thermoelectricity using nano-phononics
  • Thermoelectricity based on thermionic emission

NCSR Demokritos

  • Piezo-resistive devices, electromagnetic energy harvesting

Uppsala

  • TEG based on abundant materials (e.g. Si)

Liverpool

  • Materials and devices for energy harvesting using rectenna technology
  • Materials for PV

VTT

  • Thermoelectrics, work function harvesting, supercapacitors

UTwente

  • Thin film solar cells on chip

ICN2

  • Spin caloritronics
  • Thermoelecticity
  • Ground state DFT calculations, and Molecular Dynamics
  • Piezo electricity

IUNET_University of Modena and Reggio Emilia

  • HW-SW co-design
  • Innovative transducers

IUNET_University of Bologna

  • Nano-power and ultra-low voltage integrated circuits for energy harvesting and power management
  • Multi-source energy harvesting circuits
  • RF energy harvesting (circuits for RF power transfer down to uW)

IUNET_University of Padova

  • Power conversion topologies and techniques for Wiegand transducers and photovoltaic cells

IUNET_University of Perugia

  • Wireless Power Transfer systems
  • Wireless Power lines

IUNET_University of Roma “La Sapienza”

  • Solar cell
  • Thermoelectric cells

IUNET_University of Udine

  • Piezoelectric, photovoltaic, thermoelectric energy harvesting devices, circuits and systems.

Mechanical vibration based harvesters.

RF devices & circuits

Grenoble INP_IMEP-LAHC

  • Design and test of RF functions
    • RF front-end
    • IoT Protocols
    • Antennas

KTH

  • Low power circuit design

UCL

  • Modelling and characterization of RF passive and active devices
  • Design of CMOS RF circuits and sub-systems

RWTH

  • RF Transistors
  • RF diodes
  • Characterization up to 11GHz

NCSR Demokritos

  • RF passive devices (co-planar waveguides, filters, antennas)
  • Local low-loss RF substrate for the on-chip integration of devices

UAB

  • Modelling and simulation of graphene and post-graphene 2D materials based field effect transistors targeting RF applications

Liverpool

  • Antennas and RF power devices & technology

IEMN

  • Ultimate thinning and transfer bonding for enhanced RF performance

University of Twente

  • RF characterization (up to ~100GHz)
  • Device physics, modeling, TCAD

VTT

  • Active and passive components and circuits in RF, mm-wave and THz range, antennas

ICN2

  • Spin torque induced ferromagnetic resonance
  • Quantum control
  • Coupling phonons to RF

IUNET_University of Modena and Reggio Emilia

  • Device simulations
  • Design and characterization of transceivers operating at RF and mm-waves
  • Electrical characterization at wafer level (DC, pulse, I-DLTS)
  • RF Load-pull measurements (1.7GHz-2.5GHz, 10GHz)

IUNET_University of Bologna

  • UWB localization systems at cm-level
  • Experience in IC circuit design for RF applications. Among the blocks composing the front-end of RF transceivers, the circuit activity was principally focused on the design of VCOs and frequency synthesizers.

IUNET_University of Padova

  • Design of RF and mm-wave integrated circuits in CMOS, BiCMOS and bipolar technology
  • Characterization, physical modeling, reliability and simulation of FETs and diodes based on various binary, ternary and quaternary material systems, such as GaN, GaAs, GaO and Si. Knowledge of electrical, optical, capacitive and thermal characterization techniques for the analysis of device performance, degradation and deep level concentration. Expertise in advanced characterization techniques, such as capacitive, current, transient, optical, admittance, photocurrent and interface states deep level spectroscopy, analysis of dynamic performance, spatially- and spectrally-resolved electroluminescence and photoluminescence – both front- and back-side.
  • Reliability investigation of radio frequency micro electromechanical system (RF MEMS) and micro mirrors. In particular investigation of contact degradation of micro switches and long term mechanical viscoelastic mechanical degradation.

IUNET_University of Perugia

  • Building block design and testing (LNA, mixers, VCO…) on cellulose-based materials,
  • reconfigurable power amplifiers,
  • tunable matching networks,
  • RFIDs and RFID sensors
  • Chipless RFIDs

IUNET_University of Roma “La Sapienza”

  • CMOS integrated Oscillators

IUNET_University of Torino

  • Power amplifier design on III-V and III-N platforms,
  • low-noise amplifier design,
  • RF and microwave characterization and modeling,
  • physics-based modeling of III-V and III-N devices,
  • H-terminated diamond FETs

IUNET_University of Udine

  • RF circuit design
  • High Speed Serial links

Photonics devices

Grenoble INP_IMEP-LAHC

  • Integrated photonics :
    • Silicon Photonics
    • Glass photonic (ion exchange, 3D integration)
    • Hybrid photonics (glass interposer, polymer-glass devices, wafer-bonding and 3D integration)
  • Photonic Design and test of optical and electro-optical functions
    • 3 D electromagnetic modelling for integrated optics
    • Characterization: integrated photonic characterization bench, digital transmission (Radio over Fiber, FFTH…) test benches

IEMN

  • Electro-optical interposers for advanced packaging

KTH

  • III-V epitaxy (MOVPE) of GaAs and InP-based materials and device structures
  • Edge-and surface-emitting lasers and detectors
  • Heterogeneous integration

UCL

  • Thin SOI photodiodes (UV to visible) with graphene gate, optical reflectors…
  • SOI waveguides with graphene modulators

WUT 

  • Dielectric, conductive and semiconductor materials synthesis for optoelectronic and photonic devices technology
  • Full line-up for optical characterization of fabricated materials and structures, i.e., optical spectroscopy, high-resolution laser spectroscopy, spectroscopic ellipsometry, confocal microscopy, high-resolution spectrophotometer with a helium cryostat for absorption and advanced spectrofluorometric system for emission/excitation/fluorescence kinetics measurements, Optical Backscattering Reflectometry (OBR)

RWTH

  • Silicon and silicon nitride photonics
  • 2D photodetectors
  • Multispectral photodetectors
  • High speed photodetection

FZJ

  • GeSn photonics

NCSRD

  • Solar cells
  • Theoretical modeling of waves in the micro- and nano-scale

Liverpool

  • Utilizing semiconductor optoelectronic devices / systems to realize compact Lab-on-chip equivalents for bio- and chemical sensors

VTT

  • Active and passive components and circuits in RF, mm-wave and THz range, antennas

ICN2

  • Nanopatterning surfaces and metamaterial design for photonic components

UTwente

  • Silicon photonics (fabrication, device physics, characterization)

IUNET_University of Modena and Reggio Emilia

  • Device simulation
  • Electrical and optical characterization

IUNET_University of Bologna

  • Advanced architectures for silicon based solar cells and optcal MEMS theoretically analyzed by means of accurate TCAD simulations

IUNET_University of Calabria

  • Device simulation
  • Electrical and optical characterization.

IUNET_University of Padova

  • Characterization, physical modeling, reliability and simulation of LEDs, laser diodes, solar cells, multi-quantum well solar cells and photodiodes based on various binary, ternary and quaternary material systems, such as GaN, GaAs, InP, Si and CdTe. Knowledge of electrical, optical, capacitive and thermal characterization techniques for the analysis of device performance, degradation and deep level concentration. Expertise in advanced characterization techniques, such as capacitive, optical, admittance, photocurrent and interface states deep level spectroscopy, spatially- and spectrally-resolved electroluminescence and photoluminescence – both front- and back-side –, analysis of carrier lifetime and quantum efficiency.

IUNET_University of Perugia

  • Multi-octave Analog laser predistortion for RoF systems

IUNET_University of Roma “La Sapienza”

  • THz detectors

IUNET_University of Torino

  • Design of high-speed detectors,
  • electroabsorption modulators,
  • electro-optic modulators,
  • QW lasers,
  • III-N LEDs,
  • FIR image sensors on MERCATEL,
  • QW III-V solar cells,
  • passive element modelling and design

IUNET_University of Udine

  • Modelling, characterization and optimization of photodetectors

Power devices

Grenoble INP_IMEP-LAHC

  • Functional and electrical characterization : Characterization of power devices (on wafer, DC, AC, pulsed 20V to 3kV, temperature -200°C to +300°C)

KTH

  • SiC BJT and MOSFETs

UCL

  • Simulation and characterization of power devices in harsh environments (temperature, radiations)

WUT

  • Detailed electrical characterization, extraction of electrophysical parameters (static and pulse I-V, C-V, stress and sense, breakdown)

NCSRD

  • RF passives for power devices

Liverpool

  • Oxides and interfaces on GaN: materials characterization

UTwente

  • VDMOS, LDMOS, Trench MOS, AlGaN/GaN-HEMTs
  • Device physics, characterization, modelling and TCAD

IUNET_ University of Modena

  • Electrical characterization at wafer level (DC, pulse, I-DLTS)
  • Reliability modeling
  • Device simulation

IUNET_ University of Bologna

  • Power diodes and transistors based on Silicon and GaN: characterization and modeling of the long-term degradation.
  • Physical modeling of degradation, self-heating effects, leakage currents and breakdown conditions in power silicon and wide-bandgap devices.
  • Effects of charging and polarization of passivation materials and molding compounds. Experimental characterizations of electrical losses and humidity uptake in new plastic materials.
  • MEMS piezoelectric transformers

IUNET_ University of Calabria

  • Electrical characterization at wafer level
  • Reliability modeling

IUNET_ University of Padova

  • Characterization of power MOSFETs and IGBTs
  • Characterization of GaN HEMT power MOSFETs
  • Characterization, physical modeling, reliability and simulation of FETs – with and without gate insulator -, diodes and natural superjunctions based on various binary, ternary and quaternary material systems, such as GaN, GaAs, GaO and Si. Knowledge of electrical, optical, capacitive and thermal characterization techniques for the analysis of device performance, degradation and deep level concentration. Expertise in advanced characterization techniques, such as capacitive, current, transient, optical, admittance, photocurrent and interface states deep level spectroscopy, analysis of dynamic performance, spatially- and spectrally-resolved electroluminescence and photoluminescence – both front- and back-side.

IUNET_ University of Torino

  • III-N power transistors,
  • Si power devices,
  • EMC integrated circuit design,
  • EMI characterization of integrated circuits

IUNET_ University of Pisa

Multiscale modeling (from ab-initio to circuit simulation) of devices based on GaN and SiC. Modeling of defects and traps in GaN and SIC

Flexible electronics

Organic devices

Grenoble INP-IMEP LaHC

  • Analysis of OFET

KTH

  • Feasibility study
  • Architecture partition
  • Design hardware/software
  • Test and Validation

NCSRD

  • Organic light emitting diodes
  • Organic photovoltaics

Liverpool

  • Development of low-cost flexible organic circuits for use as key functional block in various mixed signal applications i.e. sensors and displays
  • Organic physical device modelling

UTwente

  • P3HT OFETs & VOFETs (fabrication)
  • Device physics, characterization, Modelling, and TCAD

University of Glasgow

  • Simulations of current flow in inorganic molecules
  • Link between the undelaying electronic structure (from chemistry point of view) and current flow in molecular electronic devices

VTT

  • Printed intelligence, roll-to-roll fabrication

ICN2

  • Electronic properties from first-principles
  • Simulation of charge transport in organic matter (polaron transport)

IUNET-University of Modena and Reggio Emilia

  • Electrical characterization and modeling of printed devices

IUNET-University of Padova

  • Characterization of organic devices for electronics (thin film transistor), optoelectronics (organic LEDs and light emitting transistors), and photovoltaics (polymeric solar cells, dye sensitized solar cells, perovskite solar cells).
  • Modelling of organic electronics and photovoltaic devices
  • Development, characterization and modeling of organic biosensors for neural interfacing.

IUNET-University of Torino

  • Organic solar cells,
  • Molecular organic devices

IUNET-University of Perugia

  • Electronic on cellulose and on “non conventional materials” (cellulose as a paradigm)

Others

Grenoble INP-IMEP LaHC

  • Design and DC/RF characterization of cellulosic material based RF devices

UCL

  • Ultra thinning of SOI CMOS dies to a few µm by XeF2
  • Transfer of high-quality monolayer graphene on flexible substrate

Uppsala University

  • Materials synthesis (PVD, CVD, ALD, solution-phase), e.g. 2D materials & functional oxides
  • Printable electronics (CNT-TFTs, graphene transparent conductor, etc.)
  • Novel materials and nanophononics for thermoelectrics
  • Solution processing of low-dimensionality materials
  • Mixed vacuum-solution processing towards fabrication of active and passive devices

RWTH

  • Flexible electronics with 2D materials

ICN2

  • 2D spintronics
  • Electronic properties from first-principles. Modeling different physical properties (structural, piezoelectric, magnetic, thermal, etc.)
  • Graphene and 2D materials electronics
  • Flexible graphene solution-gated field-effect transistors
  • Hydrophobic films
  • Defectivity and dimensional metrology of nanopatterned devices

IUNET- University of Pisa

  • Ink-jet printed electronics based on 2D materials
Smart systems

Grenoble INP_IMEP-LaHC

  • Sensors
  • Energy harvesting
  • Computation and communication

IEMN

  • Smart packaging
  • Laser-based micromachining for advanced packaging

UCL

  • Design of CMOS systems-on-chip (analog, RF, digital, memories) especially in attached UTBB FD SOI with adaptive back bias

NCSRD

  • Mass flow meter (applications in automotive and respiration control)
  • Bioanalytical microsystems

University of Glasgow

  • Sensors
  • Energy harvesting
  • Computation and communication

Liverpool

Lab-on-chip:

  • Utilizing semiconductor optoelectronic devices / systems to realize compact Lab-on-chip equivalents for bio- and chemical sensors
  • Dielectrophoresis; characterisation of cells and nanoparticles; automated bioreactors; biomimetic cell culture, microfluidic cell handling

VTT

  • Wireless and zero power systems
  • Multi-modal systems

IUNET-University of Modena and Reggio Emilia

  • Circuit design
  • Architecture design
  • Electrical testing

IUNET-University of Bologna

  • IoT sensor nodes with advanced power management for operation with uW energy harvesting
  • Energy autonomous nodes for IoT applications: wireless nodes with embedded sensing, processing, communication and actuating capabilities using energy harvesting from surrounding environment. Activity carried out in the framework of joint STMicroelectronics-ARCES laboratory also in the framework of ECSEL Connect project.

IUNET-University of Calabria

  • Circuit design
  • Architecture design
  • Electrical testing

IUNET-Politecnico of Milano

  • MEMS systems (sensors + integrated or discrete electronics for specific final applications)

IUNET-University of Perugia

  • Embedded system, Lab-on-chip building blocks

IUNET-University of Roma “La Sapienza”

  • Integrated platforms for embedded processing and wireless transmission of data to a cloud
  • Body sensor networks
  • Embedded system design
  • Microprocessor design
  • FPGA prototyping
  • Digital IC design

IUNET-University of Torino

  • Embedded systems,
  • Smart Systems for Robotics and Biomedical Applications

IUNET-University of Pisa

  • Design and characterization of MEMS-based sensors (resonant mass sensors, accelerometers) and actuators (micro mirrors).
  • Phononic devices modeling and characterization.
Systems design

KTH

  • Feasibility study
  • Architecture partition
  • Design hardware/software
  • Test and Validation

UCL

  • PCB level integration of ultra low power systems :
    • Sensors
    • Energy harvesting
    • Analog and digital signal processing
    • RF chips
    • Passive RFID tags
    • Antennas

UAB

  • Device compact modeling for Reliability-Aware Design of ICs.

Liverpool

  • ReRAM, ALD processed dielectrics and characterization

VTT

  • Sensor systems and networks, RF and communication systems

IUNET-University of Modena and Reggio Emilia

  • Circuit design
  • Architecture design
  • Electrical testing

IUNET-University of Bologna

  • Design of sensor systems for structural health monitoring applications
  • Interfacing piezoelectric transducers and accelerometers

IUNET-University of Calabria

  • Circuit design
  • Architecture design
  • Electrical testing

IUNET-University of Ferrara

  • Solid State Drives
  • FPGA with emerging non-volatile memories

IUNET-Politecnico of Milano

  • MEMS systems (sensors + integrated or discrete electronics for specific final applications)

IUNET-University of Padova

  • AC/DC, DC/DC, DC/AC power conversion design from few watts up to tens of kWatts