Basic principles, Modeling, Simulation, IC design, Technological process, Characterization, Reliability, …of:

CMOS bulk

Examples of available “Lectures” or “Practical Work” in the CMOS Bulk domain:

**Basic principles**

1- Properties of digital circuits

2- Basic principles of bulk CMOS

3- Fundamentals and operating principles

4- The MOS Transistor: Structure, Current-voltage model

5- Combinational circuits: Implementation & device sizing, Power consumption, delays and other issues

6- Clocked circuits, Dynamic logic

7- -Ultra-low-voltage (ULV) IC/SoC

8- Scaling

9- Strain, Orientation and material Engineering

**Modeling**

1- Variability in CMOS

2- Low frequency noise modeling in semiconductors

3- Compact modeling of low-frequency noise

4- Compact modeling of bulk CMOS

5- TCAD modeling

6- Semiclassical transport Modeling

7- Quantum transport modeling

8- Analytical models

9- Performance of ULV logic (speed/energy/leakage/robustness)

**Simulation**

1- TCAD simulation

2- Simulation with Monte Carlo methods

3- Simulation with quantum transport methods

4- Mixed device-circuit simulation

5- Mobility calculations with Kubo-Greenwood method

6- Variability in CMOS

**IC Design**

1- Variability in Logic Circuits

2- ASIC design flow

3- Digital system architecture

4- Simple circuit blocks for telecom applications

5- Ultralow-power analog design

6- Design of ULV logic

7- Design of ULV SoCs

**Technological Process**

1- Introduction to CMOS process and layout

**Characterization**

1- Low frequency noise characterization

2- Electrical characterization methods: I-V, split-CV

3- DC and AC Parameter extraction techniques

4- Reliability characterization, Charge pumping

5- Benchmarking device performance

6- Transport (mobility, velocity etc.)

7- Two port AC small signal up to 20 GHz

**Reliability**

1- Latch-up

2- Hot Carriers in MOSFETs

3- Ultra thin dielectrics/BTI

CMOS SOI

Examples of available “Lectures” or “Practical Work” in the CMOS SOI domain:

**Basic principles**

1- Fundamentals and operating principles

2- Scaling

3- Strain, Orientation and material Engineering

4- Basic principles of SOI CMOS

5- Performance assesment of FD SOI vs. Bulk for low-power logic

**Modeling**

1- Variability in CMOS

2- TCAD modeling

3- Semiclassical transport Modeling

4- Quantum transport modeling

5- Analytical models

6- Compact modeling of Fully-Depleted SOI CMOS

7- Compact Modeling of Partially-Depleted SOI CMOS

8- Compact modeling of low-frequency noise

**Simulation**

1- TCAD simulation

2- Simulation with Monte Carlo methods

3- Simulation with quantum transport methods

4- Mixed device-circuit simulation

5- Mobility calculations with Kubo-Greenwood method

6- Variability in CMOS

**IC Design**

1- Variability in Logic Circuits

2- Simple circuit blocks for telecom applications

3- Ultralow-power analog design

**Characterization**

1- Parameter extraction for Fully-Depleted SOI CMOS

2- DC and AC Parameter extraction techniques

3- Reliability characterization

4- Benchmarking device performance

5- Transport (mobility, velocity etc.)

6- Two port AC small signal up to 20 GHz

7- Wide frequency band characterization of UTBB SOI MOSFETs

**Reliability**

1- Hot Carriers in MOSFETs

2- Ultra thin dielectrics/BTI

3- Assessment of advanced SOI CMOS technologies for high temperature applications

Multigate Devices

Examples of available “Lectures” or “Practical Work” in the Multigate Devices domain:

**Basic principles**

1- Fundamentals and operating principles

2- Scaling

3- Strain, Orientation and material Engineering

4- Basic principles of Multigate CMOS

**Modeling**

1- Variability in CMOS

2- I-V characteristics of DG MOSFETs

3- Compact modeling of Multigate CMOS

4- Compact modeling of low-frequency noise

5- TCAD modeling

6- Semiclassical transport Modeling

7- Quantum transport modeling

8- Analytical models

**Simulation**

1- TCAD simulation

2- Simulation with Monte Carlo methods

3- Simulation with quantum transport methods

4- Mixed device-circuit simulation

5- Mobility calculations with Kubo-Greenwood method

6- Variability in CMOS

**IC Design**

1- Variability in Logic Circuits

2- Simple circuit blocks for telecom applications

**Characterization**

1- Parameter extraction for Multigate CMOS

2- DC and AC Parameter extraction techniques

3- Reliability characterization

4- Benchmarking device performance

5- Transport (mobility, velocity etc.)

6- Two port AC small signal up to 20 GHz

7- Wide frequency band characterization of MuGFETs

8- Specific features of MuGFETs electrical characterization

**Reliability**

1- Hot Carriers in MOSFETs

2- Ultra thin dielectrics/BTI

3- Radiation effects in multiple-gate devices

Interconnects

Examples of available “Lectures” or “Practical Work” in the Interconnects domain:

**Basic principles**

1- Fundamentals

2- Scaling

Other …

Examples of available “Lectures” or “Practical Work” in other More Moore domain:

**Basic principles**

1- BJT fundamentals and operating principles

**Modeling**

1- BJT Modeling

**Simulation**

1- BJT simulation with Monte Carlo techniques

**Reliability**

1- Hot carrier reliability in BJTs

Basic principles, Modeling, Simulation, IC design, Technological process, Characterization, Reliability, …of:

DRAM

Examples of available “Lectures” or “Practical Work” in the** DRAM** domain:

**Basic principles**

1- Floating Body Memories

2- Fundamentals and operating principles

SRAM

Examples of available “Lectures” or “Practical Work” in the** SRAM** domain:

**Basic principles**

1- Fundamentals and operating principles

Flash

Examples of available “Lectures” or “Practical Work” in the** Flash** domain:

**Basic principles**

1- Fundamentals and operating principles

2- NOR and NAND architectures and array operation

3- Scaling and benchmarking

**Modeling**

1- Material characteristics and device operation

2- Reliability

3- Statistical modeling

4- Compact modeling

**Simulation**

1- Cell operation (R/W/E)

2- Reliability

3- Statistical variability

**Technological Process**

1- High-k dielectrics for flash memories

**Characterization**

1- Cell operation (R/W/E)

2- Array operation and statistics

3- Reliability

**Reliability**

1- Cell-level reliability (endurance, retention,…)

2- Array-level reliability (disturbs, variability,)…

3- Few-electron phenomena (random telegraph noise, charge detrapping after cycling,…)

4- Development of extrapolation models

PCM

Examples of available “Lectures” or “Practical Work” in the** PCM** domain:

**Basic principles**

1- Fundamentals and operating principles

2- Materials and device architectures

3- Scaling and benchmarking with FG cells

**Modeling**

1- Material characteristics and device operation

2- Reliability

3- Statistical modeling

4- Compact modeling

**Simulation**

1- Electrical transport in the amorphous phase

2- Threshold/memory switching

3- Reliability (crystallization, drift, disturbs)

**Characterization**

1- Cell operation (R/W/E)

2- Array operation and statistics

3- Reliability

**Reliability**

1- Cell-level reliability (endurance, retention,…)

2- Array-level reliability (disturbs, variability)

3- Drift, 1/f noise, RTN

4- Development of extrapolation models

**Other**

1- Material/stack engineering for high temperature stability, low power and RAM applications

RRAM

Examples of available “Lectures” or “Practical Work” in the** RRAM **domain:

**Basic principles**

1- Fundamentals and operating principles

2- Unipolar and bipolar switching devices and materials

3- Scaling and benchmarking with FG cells

**Modeling**

1- Material characteristics and device operation

2- Reliability

3- Statistical modeling

4- Compact modeling

**Simulation**

1- Set/reset operations

2- Reliability (noise, retention, disturbs)

3- Statistical variability

**Characterization**

1- Cell operation (R/W/E)

2- Array operation and statistics

3- Reliability

4- DC and pulsed characteristics

**Reliability**

1- Cell-level reliability (endurance, retention,…)

2- Array-level reliability (disturbs, variability)

3- RTN, Drift

4- Development of extrapolation models

**Other**

1- Selector materials and devices

2- Computing applications

MRAM

Basic principles, Modeling, Simulation, IC design, Technological process, Characterization, Reliability, …of:

Sensors/Actuators

Examples of available “Lectures” or “Practical Work” in the** Sensors/Actuators **domains:

**Basic principles**

1- Graphene NEMS

2- MEMS / NEMS

3- Nanowire, nanopore and nanoelectrode based sensors

4- Ultra low-power temperature, RH, strain gauges, pressure, flow…

5- Harsh-environment sensors and electronics (high temperature, radiations)

6- Radiation detectors

7- Thin SOI MEMS sensors

8- On-chip MEMS-based tensile testing to explore the properties of materials at nanometer scale

**Modeling**

1- TCAD modeling

2- Poisson-Boltzmann modeling of electrode/electrolyte interfaces

3- Brownian dynamics

**Simulation**

1- Techonogical & Electromechanical simulation (Silvaco / ANSYS / FEMLAB)

2- Nanoelectrode based capacitive biosensor simulation in 1, 2 and 3D

3- Ion channel simulation

4- Gas sensors and impedance sensor simulation

**IC Design**

1- Readout interfaces

2- SOI CMOS analog ULP / harsh-environment circuits

**Technological Process**

1- Graphene NEMS

2- Surface & volume micromachined MEMS

3- Si processes for sensor fabrication (Micromachining processes, electrochemical processes)

4- Plasma etching

**Characterization**

1- Characterization of Pressure Sensors

2- SOI harsh-environment components (Sensors, electronics)

Energy Harvesting

Examples of available “Lectures” or “Practical Work” in the** Energy Harvesting **domain:

**Basic principles**

1- Fundamentals and device operation

2- Fundamentals a of solar cells

3- Overview of solar cell technologies

4- PV on SOI CMOS

5- Basic structure of solar cells

6- Limitations/improvements of solar cells

7- Cell properties & design

8- Harvesting

9- Storage

**Modeling**

1- Modeling solar cells

**Simulation**

1- PiezoNEMS

2- Simulation of solar cells

**IC Design**

1- Harvesting circuits for photovoltaic

2- Piezo and thermoelectric generators

3- ULP power management

**Characterization**

1- AFM characterization of PiezoNEMS

2- Extraction of electro(mechanical) properties of silicon nanowires under large strain

**Reliability**

1- MEMS reliability characterization

RF devices & circuits

Examples of available “Lectures” or “Practical Work” in the** RF **domain:

**Basic principles**

1- Principles of RF operation in solid-state devices and circuits

2- Fundamentals and device operation

3- III-V devices for RF applications

4- Antennas basics

5- Transmitter architecture, digital modulations

6- S parameters, impedance matching

7- Microwave amplifier design

8- HEMT – HBT

9- SOI CMOS Analog/RF device behaviors and performance

10- High-resistivity Si and SOI substrates for RF applications

**Modeling**

1- Compact RF Modeling of nanoscale MOSFETs

2- Compact RF noise modeling in nanoscale MOSFETs

3- TCAD modeling

4- Monte Carlo

5- SOI CMOS Analog/RF device models

**Simulation**

1- Introduction to CAD for RF circuits (ADS simulator)

2- TCAD simulation

**IC Design**

1- Principle

2- LNA

3- Oscillator

4- RF CMOS design

5- Circuits and systems for telecom applications

6- SOI CMOS Analog/RF circuits

**Technological Process**

1- Fabrication principle

2- HEMT technology

3- MEMS

**Characterization**

1- MEMS characterization

2- Characterization of thin films

3- S-parameter

4- RF characterization technique

5- RF MOS parameter extraction

6- Two port AC small signal up to 20GHz

7- Time domain reflectometry

8- DC performance and Reliability of III-V devices

9- SOI CMOS Analog/RF device behaviors and performance

10- Wideband electrical characterization of SOI MOS transistors

11- Wideband electrical characterization of multigate transistors

Power devices & circuits

Examples of available “Lectures” or “Practical Work” in the** Power **domain:

**Basic principles**

1- Principles of the operation of Power FETs

2- Fundamentals and device operation

3- III-V devices for power applications

4- Basics of power components (bipolar, MOSFETs)

5- Linear vs. switch-mode electronics

6- DC-DC converters

**Modeling**

1- Compact modeling of Power MOSFETs

2- Compact Modeling of Power HEMTs

3- TCAD modeling

4- Impact ionization

**Simulation**

1- TCAD simulation

**IC Design**

1- Dc/dc converters

**Characterization**

1- DC performance and Reliability of III-V devices

Imagers

Nanowires

Examples of available “Lectures” or “Practical Work” in the** Nanowires **domain:

**Basic principles**

1- Fundamentals and device operation

2- Scaling

3- Benchmarking w.r.t. CMOS and alternative device concepts

4- Introduction to nanomaterials: nanotubes, nanowires…

5- Physics of nanowire MOSFETs

**Modeling**

1- Analytical and compact modeling

2- Semiclassical transport modeling

3- Quantum mechanical transport modeling

4- TCAD modeling

5- Compact modeling of nanowire MOSFETs

6- Compact modeling of junctionless nanowires

7- RF Compact Modeling of nanowires

**Simulation**

1- TCAD simulation

2- Monte Carlo simulation of carrier transport

3- Quantum mechanical simulation

4- Mixed device-circuit simulation

**Technological Process**

1- Fabrication methods of nanostructures

**Characterization**

1- Nanocharacterization

2- DC

3- RF

4- AFM-STM

5- Basic DC and AC small signal

6- Temperature

7- Noise

Tunnel FETs

Examples of available “Lectures” or “Practical Work” in the** Tunnel FETs **domain:

**Basic principles**

1- Physical basics of tunneling

2- Tunnel FETs

3- Physics of Tunnel FETs

4- Fundamentals and device operation

5- Scaling

6- Benchmarking w.r.t. CMOS and alternative device concepts

7- Noise

**Modeling**

1- Modelling of currents through high-k dielectrics

2- Modelling MOS gate currents through single and double gates

3- MOS tunelling switches

4- Compact modeling of Tunnel FETs

5- Analytical modeling

6- Semiclassical transport modeling

7- Quantum mechanical transport modeling

8- TCAD modeling

**Simulation**

1- TCAD simulation

2- Monte Carlo simulation of carrier transport

3- Quantum mechanical simulation

4- Mixed device-circuit simulation

**Technological Process**

1- Fabrication methods of nanostructures

**Characterization**

1- Nanocharacterization

2- DC

3- RF

4- AFM-STM

5- Basic DC and AC small signal

6- Temperature

7- Noise

**Reliability**

1- Ultrathin dielectric layers realibility issues

Fe gate FETs

NEMS

Examples of available “Lectures” or “Practical Work” in the** NEMS **domain:

**Basic principles**

1- Introduction on MEMS/ BioMEMS

2- Green chemistry /environmental control

3- Basic concepts of microfluidics

4- Basic concepts of micromechanics

**Technological Process**

1- Microfabrication on plastic materials

2- Generic MEMS technology

Spin Devices

Carbon Electronics

Examples of available “Lectures” or “Practical Work” in the** Carbon Electronics **domain:

**Basic principles**

1- Graphene

2- CNTs

3- Carbon based nanomaterials

4- Fundamentals and device operation

5- Scaling

6- Benchmarking w.r.t. CMOS and alternative device concepts

**Modeling**

1- Analytical and compact modeling

2- Semiclassical transport modeling

3- Quantum mechanical transport modeling

**Simulation**

1- Multiscale simulation

2- Monte Carlo simulation of carrier transport

3- Quantum mechanical simulation

**Technological Process**

1- Device Fabrication

**Characterization**

1- Raman Spectroscopy

2- Device electrical characterization

3- Basic DC and AC small signal

4- Temperature

5- Noise

2D FETs

Examples of available “Lectures” or “Practical Work” in the** 2D FETs **domain:

**Basic principles**

1- MoS2

**Modeling**

1- Analytical and compact modeling

2- Semiclassical transport modeling

3- Quantum mechanical transport modeling

**Simulation**

1- Multiscale simulation

2- Quantum mechanical simulation

**Technological Process**

1- Device Fabrication

**Characterization**

1- Raman Spectroscopy

2- Device electrical characterization

3- Basic DC and AC small signal

4- Temperature

5- Noise

Other

Examples of available “Lectures” or “Practical Work” in **Other Beyond CMOS **domain:

**Basic principles**

1- Moore law

2- New paradigme

**Technological Process**

1- Silicon nanocrystals for electronic and photonic applications

Basic principles, Modeling, Simulation, Technological process, Characterization, Reliability, … of:

High K/Low K

Examples of available “Lectures” or “Practical Work” in the** High K/Low K **domain:

**Basic principles**

1- Fundamentals

2- Physics of the gate tunneling current and noise in nanoscale MOSFETs

**Modeling**

1- Modelling of currents through high-k dielectrics

2- Compact Modeling of the gate tunneling current in nanoscale MOSFETs

3- Compact Modeling of the gate tunneling noise in nanoscale MOSFETs

4- Modeling of High-k related scattering mechanisms

5- Electrostatics of MOS stacks with multilayer dielectrics

**Simulation**

1- MOS device CV characteristics

2- MOS transistor simulation (with different modeling approaches)

**Technological Process**

1- High-k dielectrics for memory applications

2- Gate dielectric materials for TFT structures

3- ZnO-based amorphous semiconductors for application in TFT structures

**Characterization**

1- Electrical characterisation of gate stacks including high-k dielectrics

2- Gate tunneling current parameter extraction

3- AC small signal MOS CV characteristics

Strain Layers

Examples of available “Lectures” or “Practical Work” in the** Strain Layers **domain:

**Basic principles**

1- Fundamentals

**Modeling**

1- Band structure and transport modeling (TB, KP, EMA)

2- Semiclassical transport modeling

3- Quantum transport modeling

4- TCAD mobility modeling

**Simulation**

1- Monte Carlo device simulation

2- Full quantum transport simulation

Substrate/Channel Orientation

Examples of available “Lectures” or “Practical Work” in the** Substrate/Channel Orientation **domain:

**Basic principles**

1- Fundamentals

**Modeling**

1- Band structure and transport modeling (TB, KP, EMA)

2- Semiclassical transport modeling

3- Quantum transport modeling

4- TCAD mobility modeling

**Simulation**

1- Monte Carlo device simulation

2- Full quantum transport simulation

Alternative Channels (Ge, III-V,...)

Examples of available “Lectures” or “Practical Work” in the** Alternative Channels **domain:

**Basic principles**

1- Fundamentals

2- III-V materials

3- HEMT- HBT

4- Si-Ge- Sn for electronics and optoelectronics

5- Physics of III-V FETs

**Modeling**

1- On state performance

2- Off state leakage

3- Quantum effects

4- Short Channel Effects

5- Compact Modeling of III-V FETs

6- Compact Modeling of GaN HEMTs

7- Band structure and transport modeling (TB, KP, EMA)

8- Semiclassical transport modeling

9- Quantum transport modeling

10- TCAD mobility modeling

**Simulation**

1- Monte Carlo device simulation

2- Full quantum transport simulation

**Technological Process**

1- III-V technology

2- III-V FET fabrication

**Characterization**

1- Electrical characterization of Ge channel MOSFETs

2- Electrical characterization of GaN MOSFETs

3- DC and AC small signal, transient

2D Layers (Graphene, Silicene,...)

Examples of available “Lectures” or “Practical Work” in the** 2D Layers **domain:

**Basic principles**

1- Fundamentals

2- Electrical properties

3- Exploration of materials space

4- Graphene

5- MoS2

**Modeling**

1- Band structure and transport modeling (TB, KP)

2- Semiclassical transport modeling

3- Quantum transport modeling

4- Ab iniitio modeling

**Simulation**

1- Monte Carlo device simulation

2- Full quantum transport simulation

3- Multiscale simulations

4- Graphene-based photodetectors

**Technological Process**

1- Graphene fabrication

**Characterization**

1- Raman

2- SEM/FIB

SOI

Examples of available “Lectures” or “Practical Work” in the** SOI **domain:

**Basic principles**

1- Fundamentals

2- High-resistivity Si and SOI substrates for RF applications

**Modeling**

1- Band structure and transport modeling (TB, KP)

2- Semiclassical transport modeling

3- Quantum transport modeling

4- Compact Modeling of Fully-Depleted SOI MOSFETs

**Simulation**

1- Monte Carlo device simulation

2- Full quantum transport simulation

**Characterization**

1- Charge pumping in SOI

2- Electrical characterization and parameter extraction of SOI

3- Parameter extraction for Fully-Depleted SOI MOSFETs

4- DC and AC small signal, transient

5- Wideband electrical characterization of SOI substrates

Metals/Silicides

Examples of available “Lectures” or “Practical Work” in the** Metals/Silicides **domain:

**Basic principles**

1- Fundamentals of contacts

2- Silicides on SiGe

**Modeling**

1- Schottky barrier (semiclassical)

Magnetic Materials

Examples of available “Lectures” or “Practical Work” in the** Magnetic materials **domain:

**Basic principles**

1- Ferroelectric materials

2- Ferromagnetic materials

The number of hours is flexible.

Other courses in other areas are available on request. Do not hesitate to contact us.